TISP3xxxF3 (HV) Overvoltage Protector Series
Typical Characteristics - R and T Terminals
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
NORMALIZED BREAKDOWN VOLTAGES
vs
JUNCTION TEMPERATURE
TC3HAK
100
TC3HAG
V
D
=
±50
V
1.2
10
I
D
- Off-State Current -
µA
Normalized Breakdown Voltages
V
(BO)
1
1.1
V
(BR)M
0·1
1.0
V
(BR)
Normalized to V
(BR)
I
(BR)
= 100
µA
and 25
°C
Both Polarities
0·01
0·001
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature -
°C
0.9
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature -
°C
Figure 11.
Figure 12.
1.3
NORMALIZED BREAKOVER VOLTAGES
vs
RATE OF RISE OF PRINCIPLE CURRENT
TC3HAC
100
90
80
70
60
Off-State Capacitance - fF
OFF-STATE CAPACITANCE
vs
TERMINAL VOLTAGE
TC3XAA
Normalized Breakover Voltage
D Package
1.2
50
40
SL Package
30
1.1
20
Both Voltage Polarities
1.0
0·001
0·01
0·1
1
10
100
10
0·1
1
Terminal Voltage - V
10
50
di/dt - Rate of Rise of Principle Current - A/µs
Figure 13.
Figure 14.
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
