TISP30xxF3 (LV) Overvoltage Protector Series
Electrical Characteristics for T and G or R and G Terminals, TA = 25
°
C (Unless Otherwise Noted)
Parameter
Repetitive peak off-
state current
Breakover voltage
Impulse breakover
voltage
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
Test Conditions
V
D
=
±V
DRM
, 0
°C
< T
A
< 70
°C
dv/dt =
±250
V/ms, R
SOURCE
= 300
Ω
dv/dt
≤
±1000
V/µs, Linear voltage ramp,
Maximum ramp value =
±500
V
R
SOURCE
= 50
Ω
dv/dt =
±250
V/ms, R
SOURCE
= 300
Ω
I
T
=
±5
A, t
W
= 100
µs
I
T
=
±5
A, di/dt = -/+30 mA/ms
Linear voltage ramp, Maximum ramp value < 0.85V
DRM
V
D
=
±50
V
f = 1 MHz, V
d
= 0.1 V r.m.s., V
D
= 0
f = 1 MHz, V
d
= 0.1 V r.m.s., V
D
= -5 V
f = 1 MHz, V
d
= 0.1 V r.m.s., V
D
= -50 V
(see Notes 5 and 6)
‘3072F3
‘3082F3
‘3072F3
‘3082F3
±0.1
±0.15
±5
±10
140
85
40
±86
±96
±0.6
±3
Min
Typ
Max
±10
±72
±82
Unit
µA
V
I
DRM
V
(BO)
V
(BO)
I
(BO)
V
T
I
H
dv/dt
I
D
C
off
V
A
V
A
kV/µs
µA
Off-state capacitance
82
49
25
pF
NOTES: 6. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
7. Further details on capacitance are given in the Applications Information section.
Thermal Characteristics
Parameter
Test Conditions
P
tot
= 0.8 W, T
A
= 25
°C
5 cm
2
, FR4 PCB
D Package
SL Package
Min
Typ
Max
160
135
°C/W
Unit
R
θ
JA
Junction to free air thermal resistance
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
