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TISP3072F3SL 参数 Datasheet PDF下载

TISP3072F3SL图片预览
型号: TISP3072F3SL
PDF下载: 下载PDF文件 查看货源
内容描述: 低电压双的双向晶闸管过电压保护 [LOW-VOLTAGE DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS]
分类和应用: 触发装置硅浪涌保护器
文件页数/大小: 12 页 / 512 K
品牌: BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
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TISP30xxF3 (LV) Overvoltage Protector Series
Absolute Maximum Ratings, TA = 25
°
C (Unless Otherwise Noted)
Rating
Repetitive peak off-state voltage, 0
°C
< T
A
< 70
°C
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
1/2 (Gas tube differential transient, 1/2 voltage wave shape)
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)
1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25
resistor)
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape)
10/160 (FCC Part 68, 10/160 voltage wave shape)
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous)
0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape)
5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single)
5/320 (FCC Part 68, 9/720 voltage wave shape, single)
10/560 (FCC Part 68, 10/560 voltage wave shape)
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
Non-repetitive peak on-state current, 0
°C
< T
A
< 70
°C
(see Notes 1 and 3)
50 Hz, 1 s
D Package
SL Package
I
PPSM
120
80
50
70
60
55
38
50
50
45
35
4.3
7.1
250
-65 to +150
-65 to +150
A
‘3072F3
‘3082F3
Symbol
V
DRM
Value
±58
±66
Unit
V
I
TSM
di
T
/dt
T
J
T
stg
A
A/µs
°C
°C
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A
Junction temperature
Storage temperature range
NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section.
2. Initially the TISP
®
must be in thermal equilibrium with 0
°C
< T
J
<70
°
C. The surge may be repeated after the TISP
®
returns to its
initial conditions.
3. Above 70
°C,
derate linearly to zero at 150
°C
lead temperature.
Electrical Characteristics for the T and R terminals, TA = 25
°
C (Unless Otherwise Noted)
Parameter
Repetitive peak off-
state current
Off-state current
Off-state capacitance
Test Conditions
V
D
=
±2V
DRM
, 0
°C
< T
A
< 70
°C
V
D
=
±50
V
f = 100 kHz, V
d
= 100 mV , V
D
= 0,
Third terminal voltage = -50 V to +50 V
(see Notes 4 and 5)
Min
Typ
Max
±10
±10
D Package
SL Package
0.05
0.03
0.15
0.1
Unit
µA
µA
pF
I
DRM
I
D
C
off
NOTES: 4. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
5. Further details on capacitance are given in the Applications Information section.
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.