TIP3055
NPN SILICON POWER TRANSISTOR
DECEMBER 1970 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
1000
V
CE
= 4 V
T
C
= 25°C
t
p
= 300 µs, duty cycle < 2%
h
FE
- DC Current Gain
TCS637AD
100
10
0·01
0·1
1·0
10
I
C
- Collector Current - A
Figure 1.
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
100
SAS637AB
I
C
- Collector Current - A
10
t
p
= 300 µs,
d = 0.1 = 10%
t
p
= 1 ms,
d = 0.1 = 10%
t
p
= 10 ms,
d = 0.1 = 10%
DC Operation
1·0
0·1
1·0
10
100
1000
V
CE
- Collector-Emitter Voltage - V
Figure 2.
PRODUCT
INFORMATION
3