TIP3055
NPN SILICON POWER TRANSISTOR
Copyright © 1997, Power Innovations Limited, UK
DECEMBER 1970 - REVISED MARCH 1997
q
Designed for Complementary Use with the
TIP2955 Series
90 W at 25°C Case Temperature
B
SOT-93 PACKAGE
(TOP VIEW)
1
q
q
q
15 A Continuous Collector Current
Customer-Specified Selections Available
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAA
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
RATING
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (I
B
= 0) (see Note 1)
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
SYMBOL
V
CBO
V
CER
V
EBO
I
C
I
B
P
tot
P
tot
�½LI
C
T
j
T
stg
T
L
2
VALUE
100
70
7
15
7
90
3.5
62.5
-65 to +150
-65 to +150
260
UNIT
V
V
V
A
A
W
W
mJ
°C
°C
°C
This value applies when the base-emitter resistance R
BE
= 100
Ω.
Derate linearly to 150°C case temperature at the rate of 0.72 W/°C.
Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= 0.4 A, R
BE
= 100
Ω,
V
BE(off)
= 0, R
S
= 0.1
Ω,
V
CC
= 10 V.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1