TIP30, TIP30A,TIP30B, TIP30C
PNP SILICON POWER TRANSISTORS
JULY 1968 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
BASE CURRENT
TCS632AD
TCS632AE
1000
100
10
-10
VCE = -4 V
IC = -100 mA
IC = -300 mA
IC = -1 A
TC = 25°C
tp = 300 µs, duty cycle < 2%
-1·0
-0·1
1
-0·01
-0·001
-0·01
-0·1
-1·0
-0·1
-1·0
-10
-100
-1000
IC - Collector Current - A
IB - Base Current - mA
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
TCS632AF
-1·0
VCE = -4 V
TC = 25°C
-0·9
-0·8
-0·7
-0·6
-0·5
-0·01
-0·1
-1·0
IC - Collector Current - A
Figure 3.
P R O D U C T
I N F O R M A T I O N
3
BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
