TIP30, TIP30A,TIP30B, TIP30C
PNP SILICON POWER TRANSISTORS
JULY 1968 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
TIP30
-40
-60
Collector-emitter
TIP30A
TIP30B
TIP30C
TIP30
V(BR)CEO
IC
=
-30 mA
IB = 0
V
breakdown voltage
-80
(see Note 5)
-100
VCE
=
-80 V
V
BE = 0
-0.2
-0.2
-0.2
-0.2
-0.3
-0.3
Collector-emitter
cut-off current
VCE = -100 V
VCE = -120 V
VCE = -140 V
VBE = 0
VBE = 0
VBE = 0
TIP30A
TIP30B
TIP30C
TIP30/30A
TIP30B/30C
ICES
mA
Collector cut-off
current
VCE
VCE
=
=
-30 V
-60 V
IB = 0
ICEO
IEBO
hFE
mA
mA
IB = 0
Emitter cut-off
current
VEB
=
-5 V
IC = 0
-1
Forward current
transfer ratio
VCE
VCE
=
=
-4 V
-4 V
I
C = -0.2 A
40
15
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
f = 1 kHz
IC
=
-1 A
75
Collector-emitter
saturation voltage
Base-emitter
VCE(sat)
VBE
IB = -125 mA
IC
=
-1 A
-0.7
V
V
VCE
VCE
VCE
=
=
=
-4 V
-10 V
-10 V
IC
=
-1 A
-1.3
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
hfe
IC = -0.2 A
IC = -0.2 A
20
3
|hfe|
f = 1 MHz
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle £ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
MIN
TYP
MAX
UNIT
RqJC
RqJA
4.17
62.5
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
†
PARAMETER
TEST CONDITIONS
B(on) = -0.1 A
RL = 30 W
TYP
MAX
UNIT
ton
toff
Turn-on time
Turn-off time
IC = -1 A
I
IB(off) = 0.1 A
0.3
1
µs
µs
VBE(off) = 4.3 V
tp = 20 µs, dc £ 2%
†
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
P R O D U C T
I N F O R M A T I O N
2
BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
