BUL770
NPN SILICON POWER TRANSISTOR
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
10
L770CFB
MAXIMUM REVERSE-BIAS
SAFE OPERATING AREA
8
L770CRB
I
B(on)
= I
C
/ 5
V
BE(off)
= -5 V
T
C
= 25°C
I
C
- Collector Current - A
10
100
1000
I
C
- Collector Current - A
6
1·0
4
0·1
T
C
= 25°C
t
p
= 10 µs
t
p
= 1 ms
t
p
= 10 ms
DC Operation
2
0·01
1·0
0
0
100
200
300
400
500
600
700
800
V
CE
- Collector-Emitter Voltage - V
V
CE
- Collector-Emitter Voltage - V
Figure 9.
Figure 10.
JULY 1991 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
5