BUL770
NPN SILICON POWER TRANSISTOR
TYPICAL CHARACTERISTICS
INDUCTIVE SWITCHING TIMES
vs
COLLECTOR CURRENT
10
I
B(on)
= I
C
/ 5
I
B(off)
= I
C
/ 8
V
CC
= 40 V
V
CLAMP
= 300 V
L
= 1 mH
= 25°C
T
C
1·0
L770CI2
INDUCTIVE SWITCHING TIMES
vs
CASE TEMPERATURE
10
L770CI4
t
sv
t
fi
Inductive Switching Time - µs
I
B(on)
= 160 mA, V
CC
= 40 V, L = 1 mH
I
B(off)
= 100 mA, V
CLAMP
= 300 V, I
C
= 800 mA
Inductive Switching Time - µs
1·0
t
sv
t
fi
0·1
0·1
0·1
1·0
I
C
- Collector Current - A
10
0
20
40
60
80
100
T
C
- Case Temperature - °C
Figure 5.
Figure 6.
RESISTIVE SWITCHING TIMES
vs
COLLECTOR CURRENT
10
I
B(on)
I
B(off)
Resistive Switching Time - µs
= I
C
/ 5, V
CC
= 300 V
= I
C
/ 5, T
C
= 25°C
Resistive Switching Time - µs
L770CR1
RESISTIVE SWITCHING TIMES
vs
CASE TEMPERATURE
10
I
B(on)
= 160 mA, V
CC
= 300 V
I
B(off)
= 160 mA, I
C
= 800 mA
L770CR2
1·0
1·0
t
sv
t
fi
0·1
0·1
0·1
1·0
I
C
- Collector Current - A
10
0
t
sv
t
fi
20
40
60
80
100
T
C
- Case Temperature - °C
Figure 7.
Figure 8.
4
JULY 1991 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
