BDX53, BDX53A, BDX53B, BDX53C
NPN SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
40000
TCS120AG
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
3·0
t
p
= 300 µs, duty cycle < 2%
I
B
= I
C
/ 100
2·5
TCS120AH
h
FE
- Typical DC Current Gain
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
10000
2·0
1·5
1000
1·0
0·5
V
CE
= 3 V
t
p
= 300 µs, duty cycle < 2%
100
0·5
1·0
I
C
- Collector Current - A
10
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
1·0
I
C
- Collector Current - A
10
0
0·5
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
3·0
V
BE(sat)
- Base-Emitter Saturation Voltage - V
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
TCS120AI
2·5
2·0
1·5
1·0
I
B
= I
C
/ 100
t
p
= 300 µs, duty cycle < 2%
0·5
0·5
1·0
I
C
- Collector Current - A
10
Figure 3.
MAY 1989 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
3