BDX53, BDX53A, BDX53B, BDX53C
NPN SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
Collector-emitter
breakdown voltage
TEST CONDITIONS
BDX53
V
(BR)CEO
I
C
= 100 mA
I
B
= 0
(see Note 3)
BDX53A
BDX53B
BDX53C
V
CE
= 30 V
I
CEO
Collector-emitter
cut-off current
V
CE
= 30 V
V
CE
= 40 V
V
CE
= 50 V
V
CB
= 45 V
I
CBO
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Base-emitter
saturation voltage
Collector-emitter
saturation voltage
Parallel diode
forward voltage
V
CB
= 60 V
V
CB
= 80 V
V
CB
= 100 V
I
EBO
h
FE
V
BE(sat)
V
CE(sat)
V
EC
V
EB
=
V
CE
=
I
B
=
I
B
=
I
E
=
5V
3V
12 mA
12 mA
3A
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
C
= 0
I
C
= 3 A
I
C
= 3 A
I
C
= 3 A
I
B
= 0
(see Notes 3 and 4)
(see Notes 3 and 4)
(see Notes 3 and 4)
750
2.5
2
2.5
V
V
V
BDX53
BDX53A
BDX53B
BDX53C
BDX53
BDX53A
BDX53B
BDX53C
MIN
45
60
80
100
0.5
0.5
0.5
0.5
0.2
0.2
0.2
0.2
2
mA
mA
mA
V
TYP
MAX
UNIT
NOTES: 3. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θJC
R
θJA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
2.08
62.5
UNIT
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
t
on
t
off
†
TEST CONDITIONS
I
C
= 3 A
V
BE(off)
= -4.5 V
I
B(on)
= 12 mA
R
L
= 10
Ω
†
MIN
I
B(off)
= -12 mA
t
p
= 20
µs,
dc
≤
2%
TYP
1
5
MAX
UNIT
µs
µs
Turn-on time
Turn-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
MAY 1989 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
