BDW64, BDW64A, BDW64B, BDW64C, BDW64D
PNP SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
COLLECTOR CURRENT
TCS125AE
TCS125AD
40000
10000
-2·0
tp = 300 µs, duty cycle < 2%
IB = IC / 100
TC = -40°C
TC = 25°C
TC = 100°C
-1·5
-1·0
-0·5
1000
TC = -40°C
VCE
=
-3 V
TC = 25°C
tp = 300 µs, duty cycle < 2%
TC = 100°C
100
-0·5
0
-0·5
-1·0
-10
-1·0
-10
IC - Collector Current - A
IC - Collector Current - A
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS125AF
-3·0
-2·0
-2·5
-1·0
-1·5
-0·5
TC = -40°C
TC = 25°C
TC = 100°C
IB = IC / 100
tp = 300 µs, duty cycle < 2%
-0·5
-1·0
-10
IC - Collector Current - A
Figure 3.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
