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BDW64B 参数 Datasheet PDF下载

BDW64B图片预览
型号: BDW64B
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅功率DARLINGTONS [PNP SILICON POWER DARLINGTONS]
分类和应用:
文件页数/大小: 5 页 / 115 K
品牌: BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
 浏览型号BDW64B的Datasheet PDF文件第1页浏览型号BDW64B的Datasheet PDF文件第3页浏览型号BDW64B的Datasheet PDF文件第4页浏览型号BDW64B的Datasheet PDF文件第5页  
BDW64, BDW64A, BDW64B, BDW64C, BDW64D  
PNP SILICON POWER DARLINGTONS  
electrical characteristics at 25°C case temperature (unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
BDW64  
-45  
-60  
BDW64A  
BDW64B  
BDW64C  
BDW64D  
BDW64  
Collector-emitter  
V(BR)CEO  
IC  
=
-30 mA  
IB = 0  
(see Note 5)  
-80  
V
breakdown voltage  
-100  
-120  
VCE  
VCE  
VCE  
VCE  
VCE  
VCB  
VCB  
VCB  
=
-30 V  
-30 V  
-40 V  
-50 V  
-60 V  
-45 V  
-60 V  
-80 V  
IB = 0  
IB = 0  
IB = 0  
-0.5  
-0.5  
-0.5  
-0.5  
-0.5  
-0.2  
-0.2  
-0.2  
-0.2  
-0.2  
-5  
=
=
=
=
=
=
=
BDW64A  
BDW64B  
BDW64C  
BDW64D  
BDW64  
Collector-emitter  
cut-off current  
ICEO  
mA  
I
B = 0  
IB = 0  
E = 0  
I
IE = 0  
IE = 0  
IE = 0  
IE = 0  
IE = 0  
IE = 0  
IE = 0  
IE = 0  
BDW64A  
BDW64B  
BDW64C  
BDW64D  
BDW64  
VCB = -100 V  
VCB = -120 V  
Collector cut-off  
current  
ICBO  
mA  
mA  
VCB  
VCB  
VCB  
=
=
=
-45 V  
-60 V  
-80 V  
TC = 150°C  
TC = 150°C  
TC = 150°C  
TC = 150°C  
BDW64A  
BDW64B  
BDW64C  
BDW64D  
-5  
-5  
VCB = -100 V  
CB = -120 V  
-5  
V
I
E = 0  
IC = 0  
C = -2 A  
TC = 150°C  
-5  
Emitter cut-off  
current  
IEBO  
hFE  
VEB  
=
-5 V  
-2  
Forward current  
transfer ratio  
Base-emitter  
voltage  
VCE  
VCE  
=
=
-3 V  
-3 V  
I
750  
100  
20000  
(see Notes 5 and 6)  
(see Notes 5 and 6)  
(see Notes 5 and 6)  
IC = -6 A  
VBE(on)  
VCE(sat)  
VEC  
VCE  
=
-3 V  
IC = -2 A  
-2.5  
V
V
V
Collector-emitter  
saturation voltage  
Parallel diode  
forward voltage  
IB  
IB  
=
=
-12 mA  
-60 mA  
IC = -2 A  
-2.5  
-4  
IC = -6 A  
IE  
=
-6 A  
IB = 0  
-3.5  
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.  
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.  
thermal characteristics  
PARAMETER  
Junction to case thermal resistance  
Junction to free air thermal resistance  
MIN  
MIN  
TYP  
MAX  
UNIT  
RθJC  
RθJA  
2.08  
62.5  
°C/W  
°C/W  
resistive-load-switching characteristics at 25°C case temperature  
PARAMETER  
TEST CONDITIONS  
B(on) = -12 mA  
RL = 10 Ω  
TYP  
MAX  
UNIT  
ton  
toff  
Turn-on time  
Turn-off time  
IC = -3 A  
I
I
B(off) = 12 mA  
1
5
µs  
µs  
VBE(off) = 4.5 V  
tp = 20 µs, dc 2%  
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.  
AUGUST 1978 - REVISED SEPTEMBER 2002  
Specifications are subject to change without notice.  
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