BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
Collector-emitter
breakdown voltage
TEST CONDITIONS
BD646
V
(BR)CEO
I
C
= -30 mA
I
B
= 0
(see Note 5)
BD648
BD650
BD652
V
CE
= -30 V
I
CEO
Collector-emitter
cut-off current
V
CE
= -40 V
V
CE
= -50 V
V
CE
= -60 V
V
CB
= -60 V
V
CB
= -80 V
V
CB
= -100 V
I
CBO
Collector cut-off
current
V
CB
= -120 V
V
CB
= -40 V
V
CB
= -50 V
V
CB
= -60 V
V
CB
= -70 V
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
V
BE(on)
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Base-emitter
voltage
V
EB
=
V
CE
=
I
B
=
I
B
=
I
B
=
V
CE
=
-5 V
-3 V
-12 mA
-50 mA
-50 mA
-3 V
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
C
= 0
I
C
=
I
C
=
I
C
=
I
C
=
I
C
=
-3 A
-3 A
-5 A
-5 A
-3 A
T
C
= 150°C
T
C
= 150°C
T
C
= 150°C
T
C
= 150°C
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
750
-2
-2.5
-3
-2.5
V
V
V
BD646
BD648
BD650
BD652
BD646
BD648
BD650
BD652
BD646
BD648
BD650
BD652
MIN
-60
-80
-100
-120
-0.5
-0.5
-0.5
-0.5
-0.2
-0.2
-0.2
-0.2
-2.0
-2.0
-2.0
-2.0
-5
mA
mA
mA
V
TYP
MAX
UNIT
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θJC
R
θJA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
2.0
62.5
UNIT
°C/W
°C/W
2
MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
