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BD650 参数 Datasheet PDF下载

BD650图片预览
型号: BD650
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅功率DARLINGTONS [PNP SILICON POWER DARLINGTONS]
分类和应用:
文件页数/大小: 5 页 / 115 K
品牌: BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
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BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
Designed for Complementary Use with
BD645, BD647, BD649 and BD651
62.5 W at 25°C Case Temperature
8 A Continuous Collector Current
Minimum h
FE
of 750 at 3V, 3 A
B
C
E
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
BD646
Collector-base voltage (I
E
= 0)
BD648
BD650
BD652
BD646
Collector-emitter voltage (I
B
= 0)
BD648
BD650
BD652
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
V
EBO
I
C
I
CM
I
B
P
tot
P
tot
�½LI
C
2
T
j
T
stg
T
L
V
CEO
V
CBO
SYMBOL
VALUE
-80
-100
-120
-140
-60
-80
-100
-120
-5
-8
-12
-0.3
62.5
2
50
-65 to +150
-65 to +150
260
V
A
A
A
W
W
mJ
°C
°C
°C
V
V
UNIT
This value applies for t
p
0.3 ms, duty cycle
10%.
Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= -5 mA, R
BE
= 100
Ω,
V
BE(off)
= 0, R
S
= 0.1
Ω,
V
CC
= -20 V.
MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1