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61089B 参数 Datasheet PDF下载

61089B图片预览
型号: 61089B
PDF下载: 下载PDF文件 查看货源
内容描述: - 12号的铝制车身绘( RAL 7032 ) []
分类和应用:
文件页数/大小: 20 页 / 1167 K
品牌: BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
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TISP61089B High Voltage Ringing SLIC Protector
Recommended Operating Conditions
Component
C
G
TISP61089B gate decoupling capacitor
TISP61089B series resistor for GR-1089-CORE first-level surge survival
TISP61089B series resistor for GR-1089-CORE first-level and second-level surge survival
R
S
TISP61089B series resistor for GR-1089-CORE intra-building port surge survival
TISP61089B series resistor for K.20, K.21 and K.45 coordination with a 400 V primary
protector
Min
100
25
40
8
10
Typ
220
Max
Unit
nF
Electrical Characteristics, TJ = 25
°
C (Unless Otherwise Noted)
Parameter
I
D
V
(BO)
V
GK(BO)
V
F
V
FRM
I
H
I
GKS
I
GT
V
GT
C
KA
Off-state current
Breakover voltage
Gate-cathode impulse
breakover voltage
Forward voltage
Peak forward recovery
voltage
Holding current
Gate reverse current
Gate trigger current
Gate-cathode trigger
voltage
Cathode-anode off-
state capacitance
V
D
= V
DRM
, V
GK
= 0
Test Conditions
T
J
= 25
°C
T
J
= 85
°C
Min
Typ
Max
-5
-50
-112
12
3
10
-150
T
J
= 25
°C
T
J
= 85
°C
-5
-50
5
2.5
V
D
= -3 V
V
D
= -48 V
100
50
Unit
µA
µA
V
V
V
V
mA
µA
µA
mA
V
pF
pF
2/10
µs,
I
TM
= -100 A, di/dt = -80 A/µs, R
S
= 50
Ω,
V
GG
= -100 V
2/10
µs,
I
TM
= -100 A, di/dt = -80 A/µs, R
S
= 50
Ω,
V
GG
= -100 V,
(see Note 4)
I
F
= 5 A, t
w
= 200
µs
2/10
µs,
I
F
= 100 A, di/dt = 80 A/µs, R
S
= 50
Ω,
(see Note 4)
I
T
= -1 A, di/dt = 1A/ms, V
GG
= -100 V
V
GG
= V
GK
= V
GKRM
, V
KA
= 0
I
T
= -3 A, t
p(g)
20
µs,
V
GG
= -100 V
I
T
= -3 A, t
p(g)
20
µs,
V
GG
= -100 V
f = 1 MHz, V
d
= 1 V, I
G
= 0, (see Note 5)
NOTES: 4. The diode forward recovery and the thyristor gate impulse breakover (overshoot) are not strongly dependent of the gate supply
voltage value (V
GG
).
5. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
device terminals are a.c. connected to the guard terminal of the bridge.
Thermal Characteristics
Parameter
R
θ
JA
Junction to free air thermal resistance
Test Conditions
T
A
= 25
°C,
EIA/JESD51-3 PCB, EIA/
JESD51-2 environment, P
TOT
= 1.7 W
Min
Typ
Max
120
Unit
°C/W
OCTOBER 2000 - REVISED JULY 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.