BL
Galaxy Electrical
Silicon Epitaxial Planar Transistor
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
h
FE
V
CE(sat)
f
T
Test conditions
I
C
=-10μA,I
E
=0
I
C
=-2mA,I
B
=0
B
Production specification
2SB709A
MIN
-45
-45
-7
-0.1
-100
160
460
-0.5
60
V
MHz
TYP
MAX
UNIT
V
V
V
μA
μA
I
E
=-10μA,I
C
=0
V
CB
=-20V,I
E
=0
V
EB
=-10V,I
C
=0
V
CE
=-10V,I
C
=-2mA
I
C
=-100mA, I
B
=-10mA
B
V
CE
=-10V, I
C
=-1mA
f=200MHz
Collector output capacitance
C
ob
V
CB
=-10V,I
E
=0,f=1MHz
2.7
pF
CLASSIFICATION
Range
Marking
OF
h
FE(1)
160-260
BQ1
210-340
BR1
290-460
BS1
Document number: BL/SSSTC015
Rev.A
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BILIN [ GALAXY SEMI-CONDUCTOR HOLDINGS LIMITED ]
