BL
Galaxy Electrical
Silicon Epitaxial Planar Transistor
FEATURES
High forward current transfer ratio h
FE
.
Mini type package, allowing downsizing
of the equipment and automatic insertion
through the tape packing and the magazine
packing.
Production specification
2SB709A
Pb
Lead-free
APPLICATIONS
For general amplification complementary to 2SD601A
SOT-23
ORDERING INFORMATION
Type No.
2SB709A
Marking
BQ1,BR1,BS1
Package Code
SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j,
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
Value
-45
-45
-7
-200
200
-55~150
Units
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC015
Rev.A
www.galaxycn.com
1
BILIN [ GALAXY SEMI-CONDUCTOR HOLDINGS LIMITED ]
