BL
Galaxy Electrical
Silicon Epitaxial Planar Transistor
Production specification
2SB1197
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Test conditions
I
C
=-50μA,I
E
=0
I
C
=-1mA,I
B
=0
I
E
=-50μA,I
C
=0
V
CB
=-20V,I
E
=0
V
EB
=-4V,I
C
=0
V
CE
=-3V,I
C
=-100mA
I
C
=-500mA, I
B
=-50mA
V
CE
=-5V, I
C
=-50mA
f=100MHz
50
82
MIN
-40
-32
-5
-0.5
-0.5
390
-0.5
V
MHz
TYP
MAX
UNIT
V
V
V
μA
μA
Collector output capacitance
C
ob
V
CB
=-10V,I
E
=0,f=1MHz
30
pF
CLASSIFICATION
Range
Marking
OF
h
FE(1)
82-180
P
120-270
Q
180-390
R
Document number: BL/SSSTC016
Rev.A
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2
BILIN [ GALAXY SEMI-CONDUCTOR HOLDINGS LIMITED ]
