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2SB1197_0712 参数 Datasheet PDF下载

2SB1197_0712图片预览
型号: 2SB1197_0712
PDF下载: 下载PDF文件 查看货源
内容描述: 硅外延平面晶体管 [Silicon Epitaxial Planar Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 408 K
品牌: BILIN [ GALAXY SEMI-CONDUCTOR HOLDINGS LIMITED ]
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BL
Galaxy Electrical
Silicon Epitaxial Planar Transistor
FEATURES
Small surface mounting type.
Corredtor peak current(Max.=1000mA)
Suitable for high packing density.
Low voltage(Max.=40v)
High saturation current capability.
Voltage controlled small signal switch.
Production specification
2SB1197
Pb
Lead-free
APPLICATIONS
Telephone and professional communication equipment.
Other switching appilications.
SOT-23
ORDERING INFORMATION
Type No.
2SB1197
Marking
AHP,AHQ,AHR
Package Code
SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
C
T
j,
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current DC
Peak Collector Current
Peak Base Current
Collector Dissipation
Junction and Storage Temperature
Value
-40
-32
-5
-800
-1
-80
200
-65~150
Units
V
V
V
mA
A
mA
mW
Document number: BL/SSSTC016
Rev.A
www.galaxycn.com
1