BCP160T
ELECTRICAL CHARACTERISTIC (TUNED FOR GAIN) Ta = 25° C
TEST
SYMBOL
PARAMETER/TEST CONDITIONS
MIN.
TYPICAL
MAX.
UNIT
FREQ.
P1dB
G1dB
Output Power @ P1dB (Vds = 8V, Ids = 50% Idss
)
12 GHZ
29.5
10.0
30.5
11.0
dBm
dB
Gain @ P1dB (Vds = 8V, Ids = 50% Idss
PAE @ P1dB (Vds = 8V, Ids = 50% Idss)
Saturated Drain Current (Vgs = 0V, Vds = 1.0V)
)
12 GHZ
12 GHZ
PAE
40.0
%
Idss
Gm
320
-2.5
480
640
-1.1
-15
640
mA
mS
V
Transconductance (Vds = 3V, Vgs = 50% Idss
)
Vp
BVgd
Pinch-off Voltage (Ids = 1.6 mA, Vds = 2V)
-0.5
-12
Drain Breakdown Voltage (Igd = 1.6 mA, source open)
Source Breakdown Voltage (Ig = 1.6 mA, drain open)
Thermal Resistance (Au-Sn Eutectic Attach)
V
BVgs
Rth
-13
33
V
° C/W
MAXIMUM RATING (Ta = 25° C)
SYMBOL
Vds
PARAMETERS
ABSOLUTE
CONTINUOUS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
12 V
-6 V
Idss
8 V
-3 V
Idss
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
80 mA
30 dBm
175° C
14 mA
@ 3 dB Compression
150° C
-60° C - 150° C
6.0 W
-60° C - 150° C
5.0 W
Exceeding any of the above Maximum Ratings will result in reduced MTTF and may cause permanent damage to the device.
PIN_POUT/Gain, PAE (12 GHz)
Frequency = 12GHz
Frequency = 12GHz
Vds = 8 V, Ids = 50% Idss (Tuned for Power)
Vds = 8 V, Ids = 50% Idss (Tuned for Gain)
www.berex.com
BeRex, Inc. 1735 North 1st Street #302 San Jose, CA 95112 tel. (408) 452-5595
Specifications are subject to change without notice. ©BeRex 2011 Rev. 1.2
September 2011
BEREX [ BEREX CORPORATION ]
