BCP160T
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 1600µm)
The BeRex BCP160T is a GaAs Power pHEMT with a nominal 0.25 micron gate length and 1600 micron gate width
making the product ideally suited for applications where high-gain and medium power in the 1000 MHz to 26.5
GHz frequency range are required. The product may be used in either wideband (6-18 GHz) or narrow-band
applications. The BCP160T is produced using state of the art metallization with SI3N4 passivation and is screened to
assure reliability.
PRODUCT FEATURES
33 dBm Typical Output Power
10.5 dB Typical Gain @ 12 GHz
0.25 X 1600 Micron Recessed Gate
APPLICATIONS
Commercial
Military / Hi-Rel.
Test & Measurement
ELECTRICAL CHARACTERISTIC (TUNED FOR POWER) Ta = 25° C
TEST
FREQ.
SYMBOL
PARAMETER/TEST CONDITIONS
MIN.
TYPICAL
MAX.
UNIT
P1dB
G1dB
PAE
Idss
Output Power @ P1dB (Vds = 8V, Ids = 50% Idss
)
12 GHZ
12 GHZ
12 GHZ
32.0
9.5
33.0
10.5
60
dBm
dB
%
Gain @ P1dB (Vds = 8V, Ids = 50% Idss
PAE @ P1dB (Vds = 8V, Ids = 50% Idss
Saturated Drain Current (Vgs = 0V, Vds = 1.0V)
)
)
320
-2.5
480
640
-1.1
-15
-13
33
640
mA
mS
V
Gm
Transconductance (Vds = 3V, Vgs = 50% Idss
)
Vp
Pinch-off Voltage (Ids = 1.6 mA, Vds = 2V)
-0.5
-12
BVgd
BVgs
Rth
Drain Breakdown Voltage (Ig = 1.6 mA, source open)
Source Breakdown Voltage (Ig = 1.6 mA, drain open)
Thermal Resistance (Au-Sn Eutectic Attach)
V
V
°C/W
www.berex.com
BeRex, Inc. 1735 North 1st Street #302 San Jose, CA 95112 tel. (408) 452-5595
Specifications are subject to change without notice. ©BeRex 2011 Rev. 1.2
September 2011
BEREX [ BEREX CORPORATION ]
