Preliminary Datasheet
ULTRA LOW QUIESCENT CURRENT CMOS LDO
Absolute Maximum Ratings (Note 1)
Parameter
Input Voltage
Enable Input Voltage (AP2139)
Lead Temperature
Junction Temperature
Storage Temperature Range
ESD (Machine Model)
ESD (Human Body Model)
Thermal Resistance (Note 2)
Symbol
V
IN
V
CE
T
LEAD
T
J
T
STG
ESD
ESD
θ
JA
SOT-23-3
SOT-23-5
SOT-89
Value
7.0
-0.3 to V
IN
+0.3
260
150
-65 to 150
350
2000
250
250
165
o
C/W
AP2138/2139
Unit
V
V
o
o
C
C
o
C
V
V
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Note 2: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifica-
tions do not apply when operating the device outside of its operating ratings. The maximum allowable power dissipation is a
function of the maximum junction temperature, T
J(max),
the junction-to-ambient thermal resistance,
θ
JA,
and the ambient tem-
perature, T
A.
The maximum allowable power dissipation at any ambient temperature is calculated using: P
D(max)
=(T
J(max)
-
T
A
)/θ
JA.
Exceeding the maximum allowable power dissipation will result in excessive die temperature.
Recommended Operating Conditions
Parameter
Input Voltage
Operating Ambient Temperature Range
Symbol
V
IN
T
A
Min
2.5
-40
Max
6.6
85
Unit
V
o
C
Jul. 2011 Rev. 2. 0
6
BCD Semiconductor Manufacturing Limited
BCDSEMI [ BCD SEMICONDUCTOR MANUFACTURING LIMITED ]
