Preliminary Datasheet
ULTRA LOW QUIESCENT CURRENT CMOS LDO
AP2138/2139
Electrical Characteristics (Continued)
AP2138/2139-1.8 Electrical Characteristics
(VIN=2.8V, VCE=2.8V (AP2139),T =25oC, IOUT=40mA, CIN=COUT=1µF, Bold typeface applies over -40oC≤T ≤85oC, unless
J
J
otherwise specified.)
Parameter
Symbol
VIN
Conditions
Min
Typ
Max
6.6
1.764 1.800 1.836
Unit
V
Input Voltage
Output Voltage
VOUT
IQ
V
Quiescent Current
Standby Current (AP2139)
Output Current
IOUT=0
1.0
0.1
1.5
1
µA
µA
mA
ISTD
VCE=0
IOUT
250
VRLOAD
1mA≤IOUT≤100mA
2.8V≤VIN≤6V
IOUT=10mA
Load Regulation
Line Regulation
25
6
40
18
mV
mV
VRLINE
25
100
250
I
OUT=30mA
IOUT=100mA
OUT=250mA
120
400
850
VDROP
Dropout Voltage
mV
700
I
1100
µV/oC
∆VOUT/∆T
(∆VOUT/VOUT)/∆T
ISHORT
±180
±100
50
Output Voltage
Temperature Coefficient
ppm/oC
mA
VOUT=0
Short Circuit Current
CE Pull-down Constant
Current (AP2139)
IPD
VIH
VIL
0.2
µA
V
CE Input Logic-high
Voltage (AP2139)
1.2
CE Input Logic-low
Voltage (AP2139)
0.3
V
SOT-23-3
SOT-23-5
SOT-89
81.9
81.9
51.1
oC/W
θJC
Thermal Resistance
Jul. 2011 Rev. 2. 0
BCD Semiconductor Manufacturing Limited
10
BCDSEMI [ BCD SEMICONDUCTOR MANUFACTURING LIMITED ]
