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MT5C6405EC-15/883C 参数 Datasheet PDF下载

MT5C6405EC-15/883C图片预览
型号: MT5C6405EC-15/883C
PDF下载: 下载PDF文件 查看货源
内容描述: 16K ×4的SRAM SRAM存储器阵列 [16K x 4 SRAM SRAM MEMORY ARRAY]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 11 页 / 77 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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SRAM  
MT5C6405  
Austin Semiconductor, Inc.  
+5V  
+5V  
480  
ACTEST CONDITIONS  
480  
Input pulse levels ...................................... Vss to 3.0V  
Input rise and fall times ......................................... 5ns  
Input timing reference levels ................................ 1.5V  
Output reference levels ....................................... 1.5V  
Output load ................................. See Figures 1 and 2  
Q
Q
30pF  
255  
5 pF  
255  
Fig. 1 Output Load  
Equivalent  
Fig. 2 Output Load  
Equivalent  
7. At any given temperature and voltage condition,  
tHZCE is less than tLZCE, and tHZWE is less than tLZWE  
8. WE\ is HIGH for READ cycle.  
NOTES  
.
1. All voltages referenced to VSS (GND).  
2. -3V for pulse width < 20ns  
9. Device is continuously selected. Chip enables and  
output enables are held in their active state.  
10. Address valid prior to, or coincident with, latest  
occurring chip enable.  
11. RC = Read Cycle Time.  
12. CE2 timing is the same as CE1\ timing. The waveform  
is inverted.  
3. ICC is dependent on output loading and cycle rates.  
The specified value applies with the outputs  
unloaded, and f =  
1
Hz.  
tRC (MIN)  
t
4. This parameter is guaranteed but not tested.  
5. Test conditions as specified with the output loading  
as shown in Fig. 1 unless otherwise noted.  
6. tHZCE, tHZOE and tHZWE are specified with CL = 5pF as  
in Fig. 2. Transition is measured ±200mV typical from  
steady state voltage, allowing for actual tester RC time  
constant.  
DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only)  
DESCRIPTION  
CONDITIONS  
SYM  
MIN  
MAX UNITS NOTES  
2
---  
V
VCC for Retention Data  
VDR  
CE\ > (VCC - 0.2V)  
Data Retention Current  
1
mA  
VCC = 2V ICCDR  
VIN > (VCC - 0.2V)  
or < 0.2V  
Chip Deselect to Data  
Retention Time  
tCDR  
tR  
0
---  
ns  
ns  
4
Operation Recovery Time  
4, 11  
tRC  
LOWVcc DATA RETENTIONWAVEFORM  
DATA RETENTION MODE  
VCC  
4.5V  
4.5V  
VDR > 2V  
tCDR  
tR  
VIH  
VIL  
VDR  
CE\  
DON’T CARE  
UNDEFINED  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
MT5C6405  
Rev. 2.1 06/05  
5