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AS8FLC2M32BQ-90/Q 参数 Datasheet PDF下载

AS8FLC2M32BQ-90/Q图片预览
型号: AS8FLC2M32BQ-90/Q
PDF下载: 下载PDF文件 查看货源
内容描述: 全封闭,多芯片模块( MCM ) 64MB, 2M ×32 , 3.3Volt引导块闪存阵列 [Hermetic, Multi-Chip Module (MCM) 64Mb, 2M x 32, 3.3Volt Boot Block FLASH Array]
分类和应用: 闪存
文件页数/大小: 29 页 / 403 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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SEMICONDUCTOR, INC.  
FLASH  
AS8FLC2M32  
Austin Semiconductor, Inc.  
Sector Protect / Unprotect Timing Diagram  
V
ID  
IH  
V
RESET#  
SA, A6,  
Valid*  
Valid*  
Valid*  
A1, A0  
Sector Protect/Unprotect  
Verify  
40h  
Data  
60h  
60h  
Status  
Sector Protect: 150 µs  
Sector Unprotect: 15 ms  
1 µs  
CE#  
WE#  
OE#  
Note  
For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0.  
Alternate CE# Controlled Erase/Program Operations  
Parameter  
Speed Options  
JEDEC  
Std  
Description  
Write Cycle Time1  
70  
90 100 120 Unit  
tAVAV  
tWC  
ns  
ns  
ns  
ns  
ns  
ns  
70  
90 100 120  
0
tAVEL  
tELAX  
tDVEH  
tEHDX  
tAS  
tAH  
Address Setup Time  
Address Hold Time  
Data Setup Time  
45  
tDS  
35  
40  
45  
45  
tDH  
tOES  
Data Hold Time  
0
0
Output Enable Setup Time  
Min  
Read Recovery Time Before Write  
High to WE# Low)  
(OE#  
tGHEL  
tGHEL  
0
ns  
tWLEL  
tEHWH  
tELEH  
tEHEL  
tWS  
tWH  
WE# Setup Time  
WE# Hold Time  
0
0
ns  
ns  
ns  
ns  
ns  
tCP  
CE# Pulse Width  
CE# Pulse Width High  
35  
30  
20  
5
tCPH  
tSR/W  
tWHWH1  
tWHWH2  
Latency Between Read and Write Operations  
Programming Operation2  
Sector Erase Operation2  
tWHWH1  
tWHWH2  
Byte  
µs  
sec  
Typ  
0.7  
Notes:  
1. Not 100% Tested  
2. See Erase and Programming Performance  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS8FLC2M32B  
Rev. 1.2 5/09  
25  
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