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AS8F128K32Q-60/IT 参数 Datasheet PDF下载

AS8F128K32Q-60/IT图片预览
型号: AS8F128K32Q-60/IT
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×32的FLASH快闪存储器阵列 [128K x 32 FLASH FLASH MEMORY ARRAY]
分类和应用: 闪存存储
文件页数/大小: 22 页 / 390 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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FLASH  
AS8F128K32  
Austin Semiconductor, Inc.  
FIGURE 12: Toggle Bit Timings (During Embedded Algorithms)  
NOTES: VA = Valid address; not required for I/O6. Illustration shows first two status cycle after command sequence, last status read  
cycle, and array data read cycle.  
*applies to every 8th byte.  
AC CHARACTERISTICS: Erase and Program Operations, Alternate CEx\  
Controlled Writes  
SYMBOL  
PARAMETER  
JEDEC Standard DESCRIPTION -60 -70 -90 -120 -150 UNIT  
1
t
t
Min  
Min  
Min  
Min  
Min  
Min  
Min  
Min  
Min  
Min  
Min  
TYP  
TYP  
60 70 90 120 150 ns  
Write Cycle Time  
AVAV  
WC  
0
Address Setup Time  
Address Hold Time  
Data Setup Time  
Data Hold Time  
t
t
t
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
µs  
sec  
AVEL  
ELAX  
AS  
AH  
DS  
DH  
t
45 45 45 50 50  
t
t
t
30 30 45 50 50  
DVEH  
EHDX  
0
t
1
0
t
Output Enable Setup Time  
OES  
0
Read Recover Time Before Write  
WEx\ Setup Time  
t
t
GHEL  
GHEL  
0
t
t
t
t
EHWH  
EHWH  
WS  
WH  
0
WEx\ Hold Time  
CEx\ Pulse Width  
t
t
30 35 45 50 50  
ELEH  
CP  
20  
14  
CEx\ Pulse Width High  
t
t
CPH  
EHEL  
2
t
t
t
t
Byte Programming Operation  
WHWH1  
WHWH2  
WHWH1  
WHWH2  
2
1.0  
Chip/Sector Erase Operation  
NOTES:  
1. Not 100% tested.  
2. See the “Erase and Programming Performance” section for more information.  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS8F128K32  
Rev. 2.0 5/03  
16  
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