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AS58LC1001F-35/XT 参数 Datasheet PDF下载

AS58LC1001F-35/XT图片预览
型号: AS58LC1001F-35/XT
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×8 EEPROM耐辐射 [128K x 8 EEPROM Radiation Tolerant]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 21 页 / 272 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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EEPROM  
AS58LC1001  
Austin Semiconductor, Inc.  
AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION  
(-55oC < TC < 125oC; Vcc = 5V + .3V)  
Test Conditions  
z Input Pulse Levels:  
0.0V to 3.0V  
z Input rise and fall times:  
z Output Load:  
z Reference levels for measuring timing:  
< 20ns  
1 TTL Gate +100pF (including scope and jig)  
1.5V,1.5V  
-25  
-30  
ITEM DESCRIPTION  
TEST CONDITION  
CE\=OE\=VILWE\=VIH  
SYMBOL  
UNITS  
MIN MAX MIN MAX  
Address Access Time  
tACC  
tCE  
--- 250  
--- 250  
10 120  
---  
---  
10  
300  
300  
130  
ns  
ns  
ns  
OE\=VILWE\=VIH  
CE\=VILWE\=VIH  
Chip Enable Access Time  
Output Enable Acess Time  
tOE  
CE\=OE\=VILWE\=VIH  
CE\=VILWE\=VIH  
tOH  
tDF  
tDFR  
tRR  
Output Hold to Address Change  
Output Disable to High-Z  
0
0
---  
0
0
---  
ns  
ns  
75  
75  
CE\=OE\=VILWE\=VIH  
CE\=OE\=VILWE\=VIH  
0
0
350  
600  
0
0
350  
600  
ns  
ns  
RES\ to Output Delay  
AC ELECTRICAL CHARACTERISTICS FOR SOFTWARE DATA  
PROTECTION CYCLE OPERATION  
PARAMETER  
SYMBOL  
UNITS  
MIN  
MAX  
Byte Load Cycle Time  
PS  
tBLC  
1.0  
30  
---  
Write Cycle Time  
tWC  
15  
mS  
AC ELECTRICAL CHARACTERISTICS FOR DATA\ POLLING OPERATION  
PARAMETER  
SYMBOL  
UNITS  
MIN  
MAX  
Output Enable Hold Time  
tOEH  
0
---  
ns  
Output Enable to Write Setup Time  
Write Start Time  
tOES  
0
---  
---  
15  
ns  
tDW  
250  
---  
ns  
Write Cycle Time  
tWC  
ms  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS58LC1001  
Rev. 1.0 12/08  
6
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