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AS4SD8M16DG-75/XT 参数 Datasheet PDF下载

AS4SD8M16DG-75/XT图片预览
型号: AS4SD8M16DG-75/XT
PDF下载: 下载PDF文件 查看货源
内容描述: 128兆: 8梅格×16 SDRAM同步动态随机存取存储 [128 Mb: 8 Meg x 16 SDRAM Synchronous DRAM Memory]
分类和应用: 存储内存集成电路光电二极管动态存储器
文件页数/大小: 51 页 / 6953 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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SDRAM  
AS4SD8M16  
Austin Semiconductor, Inc.  
edge prior to, and the clock edge coincident with, the  
PRECHARGE command. An example is shown in Figure 18.  
Data n+1 is either the last of a burst of two or the last desired  
of a longer burst. Following the PRECHARGE command, a  
subsequent command to the same bank cannot be issued until  
tRP is met. The precharge can be issued coincident with the  
first coincident clock edge (T2 in Figure 18) on an A1 Version  
and with the second clock on an A2 Version (Figure 18).  
In the case of a fixed-length burst being executed to  
completion, a PRECHARGE command issued at the optimum  
time (as described above) provides the same operation that  
would result from the same fixed-length burst with auto  
precharge. The disadvantage of the PRECHARGE command  
is that is requires that the command and address buses be  
available at the appropriate time to issue the command; the  
advantage of the PRECHARGE command is that it can be used  
to truncate fixed-length or full-page bursts.  
Data for any WRITE burst may be truncated with a  
subsequent READ command, and data for a fixed-length  
WRITE burst may be immediately followed by a READ com-  
mand. Once the READ command is registered, the data inputs  
will be  
ignored, and WRITEs will not be executed. An  
example is shown in Figure 17. Data n+1 is either the last of a  
burst of two or the last desired of a longer burst.  
Data for a fixed-length WRITE burst may be followed by,  
or truncated with, a PRECHARGE command to the same bank  
(provided that auto precharge was not activated), and a full-  
page WRITE burst may be truncated with a PRECHARGE  
command to the same bank. The PRECHARGE command  
should be issued tWR after the clock edge at which the last de-  
sired input data element is registered. The auto precharge mode  
requires a tWR of at least one clock plus time, regardless of  
frequency. In addition, when truncating a WRITE burst, the  
DQM signal must be used to mask input data for the clock  
FIGURE 16: Random WRITE Cycles  
FIGURE 18: WRITE to PRECHARGE  
FIGURE 17: WRITE to READ  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS4SD8M16  
Rev. 0.5 04/05  
17