DRAM
Austin Semiconductor, Inc.
AS4LC4M16
I
CC
OPERATING CONDITIONS AND MAXIMUM LIMITS
1,2,3,5,6
(V
CC
= +3.3V ±0.3V)
PARAMETERS
STANDBY CURRENT: TTL
RAS\ = CAS\ = V
IH
STANDBY CURRENT: CMOS
(RAS\ = CAS\ > V
CC
- 0.2V; DQs may be left open;
Other inputs: V
IN
> V
CC
- 0.2V or V
IN
< 0.2V)
OPERATING CURRENT: Random READ/WRITE
Average power supply current
(RAS\, CAS\, address cycling: t
RC
= t
RC
[MIN])
OPERATING CURRENT: EDO PAGE MODE
Average power supply current
(RAS\ = V
IL
, CAS\, address cycling: t
PC
= t
PC
[MIN])
REFRESH CURRENT: RAS\-ONLY
Average power supply current
(RAS\ cycling, CAS\ = V
IH
: t
RC
= t
RC
[MIN])
REFRESH CURRENT: CBR
Average power supply current
(RAS\, CAS\, address cycling: t
RC
= t
RC
[MIN])
REFRESH CURRENT: Extended ("S" version only)
Average power supply current: CAS\ = 0.2V or CBR cycling;
RAS\ = t
RAS
(MIN); WE\ = V
CC
- 0.2V; A0 - A10, OE\ and
D
IN
= V
CC
- 0.2V or 0.2V (D
IN
may be left open); t
RC
= 125µS
REFRESH CURRENT: Self ("S" version only)
Average power supply current: CBR with RAS\ > t
RASS
(MIN)
and CAS\ held LOW; WE\ = V
CC
- 0.2V; A0 - A10, OE\ and
D
IN
= V
CC
- 0.2V or 0.2V (D
IN
may be left open)
I
CC3
165
150
mA
26
SYM
I
CC1
-5
MAX
1.5
-6
MAX
1.5
UNITS
mA
NOTES
I
CC2
1
1
mA
I
CC4
125
120
mA
26
I
CC5
165
150
mA
22
I
CC6
165
150
mA
4, 7, 23
I
CC7
1
1
mA
4, 7,
23, 37
I
CC8
1
1
mA
4, 7, 37
AS4LC4M16
Rev. 1.1 6/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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