DRAM
AS4LC4M16
Austin Semiconductor, Inc.
*Stresses greater than those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the
operation section of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods
may affect reliability.
ABSOLUTE MAXIMUM RATINGS*
Voltage onVCC Relative toVSS .......................................-1Vto +4.6V
Voltage on NC, Inputs or I/O Pins
RelativetoVSS...................................................-1Vto+4.6V
Power Dissipation...........................................................................1W
Operating temperature range, TA (ambient)..............-55°C to 125°C
Storage temperature (plastic)......................................-55°C to 150°C
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS1
(VCC = +3.3V ±0.3V)
PARAMETERS
SUPPLY VOLTAGE
SYM
MIN
MAX
UNITS
NOTES
V
3
3.6
V
CC
INPUT HIGH VOLTAGE:
Valid Logic 1; All inputs, I/Os and any NC
INPUT LOW VOLTAGE:
Valid Logic 0; All inputs, I/Os and any NC
INPUT LEAKAGE CURRENT:
V
2
V
+ 0.3
V
V
35
35
IH
CC
V
-0.3
0.8
2
IL
Any input at V (0V < V < V +0.3V);
I
-2
-5
µA
µA
36
IN
IN
CC
I
All other pins not under test = 0V
OUTPUT LEAKAGE CURRENT:
Any input at V
(0V < V
< V +0.3V);
I
5
OUT
OUT
CC
OZ
DQ is disabled and in High-Z state
OUTPUT HIGH VOLTAGE:
V
2.4
---
---
V
V
OH
I
= -2mA
OUT
OUTPUT LOW VOLTAGE:
= 2mA
V
0.4
OL
I
OUT
AS4LC4M16
AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.
Rev. 1.1 6/05
7
AUSTIN [ AUSTIN SEMICONDUCTOR ]
