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AS4DDR32M72PBG1-8/ET 参数 Datasheet PDF下载

AS4DDR32M72PBG1-8/ET图片预览
型号: AS4DDR32M72PBG1-8/ET
PDF下载: 下载PDF文件 查看货源
内容描述: 32Mx72 DDR SDRAM集成塑封微电路 [32Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 18 页 / 332 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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i PEM
2.4Gb
2.4Gb SDRAM-DDR
Austin Semiconductor, Inc.
AS4DDR32M72PBG1
32Mx72 DDR SDRAM
iNTEGRATED Plastic Encapsulated Microcircuit
FEATURES
DDR SDRAM Data Rate = 200, 250, 266, 333Mbps
Package:
208 Plastic Ball Grid Array (PBGA), 16 x 23mm-1.0mm pitch
2.5V ±0.2V core power supply
2.5V I/O (SSTL_2 compatible)
Differential clock inputs (CLK and CLK#)
Commands entered on each positive CLK edge
Internal pipelined double-data-rate (DDR)
architecture; two data accesses per clock cycle
Programmable Burst length: 2,4 or 8
Bidirectional data strobe (DQS) transmitted/received
with data, i.e., source-synchronous data capture
(one per byte)
DQS edge-aligned with data for READs; center-aligned
with data for WRITEs
DLL to align DQ and DQS transitions with CLK
Four internal banks for concurrent operation
Two data mask (DM) pins for masking write data
Programmable IOL/IOH option
Auto precharge option
Auto Refresh and Self Refresh Modes
Industrial, Enhanced and Military Temperature
Ranges
Organized as 32M x 72/80
Weight: AS4DDR32M72PBG </= 2.0 grams typical
* This product and or it’s specifications is subject to change without notice.
BENEFITS
40 - 70% SPACE SAVINGS
Reduced part count
Reduced I/O count
34% I/O Reduction
Reduced trace lengths for lower parasitic
capacitance
Suitable for hi-reliability applications
Laminate interposer for optimum TCE match
PIN/Function compatible to White
W3E32M72S-xSBx
Configuration Addressing
Parameter
Configuration
Refresh Count
Row Address
Bank Address
Column Address
32 Meg x 72
8 Meg x 16 x 4 Banks
8K
8K (A0 A12)
4 (BA0 BA1)
1K (A0 A9)
FUNCTIONAL BLOCK DIAGRAM
CLK0
CLK0\
CKE0
CS0
WE0\
RAS0\
CAS0\
DQML0
DQMH 0
DQSL0
DQSH 0
VRef
VCC
VCCQ
VSS
Ax,BA0-1
CLK2
CLK2\
CKE2
CS2
WE2\
RAS2\
CAS2\
DQML2
DQMH 2
DQSL2
DQSH 2
SD R AM
DDR
x16
2.5V Cor e
2.5V I/O
SD R AM
DDR
x16
2.5V Core
2.5V I/O
CLK1
CLK1\
CKE1
DQ0-15 CS0
WE1\
RAS1\
CAS1\
DQML1
DQMH 1
DQSL1
DQSH1
CLK4
CLK4\
SD R AM
DDR
x16
2.5V Core
2.5V I/O
CKE4
CS4
DQ16-31
WE4\
RAS4\
CAS4\
DQML4
DQMH 4
DQSL4
DQSH 4
SD R AM
DDR
x16
2.5V Core
2.5V I/O
DQ64-79
CLK3
CLK3\
CKE3
DQ32-47 CS3
WE3\
RAS3\
CAS3\
DQML3
DQMH 3
DQSL3
DQSH3
SD R AM
DDR
x16
2.5V Core
2.5V I/O
DQ48-63
AS4DDR32M72PBG1
Rev. 0.1 06/09
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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