Meg
16 Me g FPM DRAM
Austin Semiconductor, Inc.
AS4C4M4
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
1,2
(CONTINUED)
-60
SYMBOL
t
DS
t
DH
t
REF
t
WCS
t
CWD
t
RWD
t
AWD
t
CPWD
t
CSR
t
CHR
t
RPC
t
CPA
t
PC
t
PRWC
t
CP
t
RASP
t
RHCP
t
OEA
t
OED
t
OEZ
t
OEH
t
WTS
t
WTH
t
WRP
t
WRH
t
RASS
t
RPS
t
CHS
Data set-up time
Data hold time
Refresh period
Write command set-up time
CAS\ to W\ delay time
RAS\ to W\ delay time
Column address to W\ delay time
CAS\ precharge to W\ delay time
CAS\ set-up time (CAS\-before-RAS\ refresh)
CAS\ hold time (CAS\-before-RAS\ refresh)
RAS\ to CAS\ precharge time
Access time from CAS\ precharge
Fast Page cycle time
Fast Page read-modify-write cycle time
CAS\ precharge time (Fast Page Cycle)
RAS\ pulse width (Fast Page Cycle)
RAS\ hold time from CAS\ precharge
OE\ access time
OE\ to data delay
Output buffer turn off delay time from OE\
OE\ command hold time
Write command set-up time (Test mode in)
Write command hold time (Test mode in)
W\ to RAS\ precharge time (C\-B-R\ refresh)
W\ to RAS\ hold time (C\-B-R\ refresh)
RAS\ pulse width (C\-B-R\ self refresh)
RAS\ precharge time (C\-B-R\ self refresh)
CAS\ hold time (C\-B-R\ self refresh)
15
0
15
10
10
10
10
100
110
-50
15
40
85
10
60
35
15
17
0
17
10
10
10
10
110
120
-50
17
100K
0
40
85
55
60
5
10
5
35
45
95
10
70
40
17
100K
PARAMETER
MIN
0
10
32
0
45
90
60
65
5
15
5
40
MAX
MIN
0
12
32
-70
MAX
UNITS
ns
ns
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
ns
ns
13, 14, 15
13, 14, 15
13, 14, 15
11
11
6
3
7
7
7
7
NOTES
9
9
AS4C4M4
Rev. 1.1 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
5
AUSTIN [ AUSTIN SEMICONDUCTOR ]
