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AS29LV016JTRGR-55/IT 参数 Datasheet PDF下载

AS29LV016JTRGR-55/IT图片预览
型号: AS29LV016JTRGR-55/IT
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位( 2M ×8位/ 1M ×16位) CMOS 3.0伏只引导扇区闪存 [16 Megabit (2M x 8-Bit / 1M x 16-Bit) CMOS 3.0 Volt-Only Boot Sector Flash Memory]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 40 页 / 408 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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COTS PEM  
BOOT SECTOR FLASH  
Austin Semiconductor, Inc.  
AS29LV016J  
GENERAL DESCRIPTION  
The AS29LV016J is a 16 Mbit, 3.0 Volt-only Flash memory  
organized as 2,097,152 bytes or 1,048,576 words.The device  
is offered in a 48-pin TSOP package. The word-wide data  
(x16) appears on DQ15–DQ0; the byte-wide (x8) data appears  
on DQ7–DQ0. This device is designed to be programmed in-  
system with the standard system 3.0 volt VCC supply. A 12.0 V  
VPP or 5.0 VCC are not required for write or erase operations.  
The device can also be programmed in standard EPROM  
programmers.  
The sector erase architecture allows memory sectors to be  
erased and reprogrammed without affecting the data contents  
of other sectors. The device is fully erased when shipped  
from the factory.  
Hardware data protection measures include a low VCC  
detector that automatically inhibits write operations during  
power transitions. The hardware sector protection feature  
disables both program and erase operations in any  
combination of the sectors of memory. This can be achieved  
in-system or via programming equipment.  
The device offers access time of 55 ns allowing high speed  
microprocessors to operate without wait states. To eliminate  
bus contention the device has separate chip enable (CE#),  
write enable (WE#) and output enable (OE#) controls.  
The Erase Suspend/Erase Resume feature enables the user  
to put erase on hold for any period of time to read data from,  
or program data to, any sector that is not selected for erasure.  
True background erase can thus be achieved.  
The device requires only a single 3.0 volt power supply for  
both read and write functions. Internally generated and  
regulated voltages are provided for the program and erase  
operations.  
The hardware RESET# pin terminates any operation in  
progress and resets the internal state machine to reading  
array data. The RESET# pin may be tied to the system reset  
circuitry. A system reset would thus also reset the device,  
enabling the system microprocessor to read the boot-up  
firmware from the Flash memory.  
The AS29LV016J is entirely command set compatible with  
the JEDEC single-power-supply Flash standard. Commands  
are written to the command register using standard  
microprocessor write timings. Register contents serve as  
input to an internal state-machine that controls the erase  
and programming circuitry. Write cycles also internally latch  
addresses and data needed for the programming and erase  
operations. Reading data out of the device is similar to reading  
from other Flash or EPROM devices.  
The device offers two power-saving features. When  
addresses have been stable for a specified amount of time,  
the device enters the automatic sleep mode. The system  
can also place the device into the standby mode. Power  
consumption is greatly reduced in both these modes.  
Device programming occurs by executing the program  
command sequence. This initiates the Embedded Program  
algorithm—an internal algorithm that automatically times the  
program pulse widths and verifies proper cell margin. The  
Unlock Bypass mode facilitates faster programming times  
by requiring only two write cycles to program data instead of  
four.  
ASI combines years of flash memory manufacturing  
experience to produce the highest levels of quality, reliability  
and cost effectiveness. The device electrically erases all bits  
within a sector simultaneously via Fowler-Nordheim  
tunneling. The data is programmed using hot electron  
injection.  
Device erasure occurs by executing the erase command  
sequence.This initiates the Embedded Erase algorithm—an  
internal algorithm that automatically preprograms the array  
(if it is not already programmed) before executing the erase  
operation. During erase, the device automatically times the  
erase pulse widths and verifies proper cell margin.  
The host system can detect whether a program or erase  
operation is complete by observing the RY/BY# pin, or by  
reading the DQ7 (Data# Polling) and DQ6 (toggle) status  
bits. After a program or erase cycle has been completed, the  
device is ready to read array data or accept another  
command.  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS29LV016J  
Rev. 0.0 02/09  
2
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