COTS PEM
BOOT SECTOR FLASH
Austin Semiconductor, Inc.
AS29LV016
AC CHARACTERISTICS
CE#
The falling edge of the last W
WE#
BYTE#
tSET
(tAS
)
tHOLD (tAH
)
Note: Refer to the Erase/Program Operations table for tAS and tAH specifications.
Figure 15. BYTE# Timings for Write Operations
Erase / Program Operations
Parameter
Speed Options
JEDEC
Std
Description
Test Setup
70
90
90
0
100
Unit
Write Cycle Time1
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
tAVAV
tWC
70
100
tAVWL
tWLAX
tDVWH
tWHDX
tAS
tAH
45
tDS
35
45
0
55
tDH
tOES
Output Enagle Setup Time
0
Min
ns
Read Recovery Time Before Write,
(OE# High to WE# Low)
tGHWL
tGHWL
0
tELWL
tWHEH
tWLWH
tWHWL
tCS
tCH
CE# Setup Time
0
0
CE# Hold Time
tWP
Write Pulse Width
35
30
20
5
tWPH
tSR/W
Write Pulse Width High
Latency Between Read and Write Operations
Byte
Programming Operation2
tWHWH1
tWHWH2
tWHWH1
µs
Typ
7
Word
Sector Erase Operation2
VCC Setup Time1
tWHWH2
tVCS
0.7
50
0
sec
µs
Min
tRB
Recovery Time from RY / BY#
Program / Erase Valid to RY / BY# Delay
ns
tBUSY
90
Max
Notes:
1. Not 100% Tested.
2. See Erase and Programming Performance on page 38 for more information.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS29LV016
Rev. 2.1 10/08
32
AUSTIN [ AUSTIN SEMICONDUCTOR ]
