FLASH
AS29F010
Austin Semiconductor, Inc.
eꢂrꢃe ciꢂcsiaꢃ rꢂe diꢃrbled, rnd ahe device ꢂeꢃeaꢃ. Ssbꢃeqsena
oꢂiaeꢃ rꢂe ignpꢂed snail VCC iꢃ gꢂeraeꢂ ahrn VLKO. The ꢃꢄꢃaem
msꢃa ꢁꢂpvide ahe ꢁꢂpꢁeꢂ ꢃignrlꢃ ap ahe cpnaꢂpl ꢁinꢃ ap ꢁꢂevena device ꢁpoeꢂ-sꢁ. Np cpmmrndꢃ rꢂe ꢂeqsiꢂed ap ꢂeaꢂieve drar.
Reading Array Data
The device iꢃ rsapmraicrllꢄ ꢃea ap ꢂerding rꢂꢂrꢄ drar rfaeꢂ
The device iꢃ rlꢃp ꢂerdꢄ ap ꢂerd rꢂꢂrꢄ drar rfaeꢂ cpmꢁleaing rn
Embedded Pꢂpgꢂrm pꢂ Embedded Eꢂrꢃe rlgpꢂiahm.
sninaenaipnrl oꢂiaeꢃ ohen VCC iꢃ gꢂeraeꢂ ahrn VLKO
.
The ꢃꢄꢃaem must iꢃꢃse ahe ꢂeꢃea cpmmrnd ap ꢂe-enrble ahe
device fpꢂ ꢂerding rꢂꢂrꢄ drar if DQ5 gpeꢃ high, pꢂ ohile in ahe
rsapꢃeleca mpde. See ahe “Reꢃea Cpmmrnd” ꢃecaipn, nexa.
See rlꢃp “Reqsiꢂemenaꢃ fpꢂ Rerding Aꢂꢂrꢄ Drar” in ahe
“Device Bsꢃ Oꢁeꢂraipnꢃ” ꢃecaipn fpꢂ mpꢂe infpꢂmraipn. The
Rerd Oꢁeꢂraipnꢃ arble ꢁꢂpvideꢃ ahe ꢂerd ꢁrꢂrmeaeꢂꢃ, rnd ahe
Rerd Oꢁeꢂraipn Timingꢃ dirgꢂrm ꢃhpoꢃ ahe aiming dirgꢂrm.
Write Pulse “Glitch” Protection
Npiꢃe ꢁslꢃeꢃ pf leꢃꢃ ahrn 5nꢃ (aꢄꢁicrl) pn OE\, CE\, pꢂ WE\
dp npa iniairae r oꢂiae cꢄcle.
Logical Inhibit
Wꢂiae cꢄcleꢃ rꢂe inhibiaed bꢄ hplding rnꢄ pne pf OE\ = VIL,
CE\ = VIH pꢂ WE\ = VIH. Tp iniairae r oꢂiae cꢄcle, CE\ rnd WE\
msꢃa be r lpgicrl zeꢂp ohile OE\ iꢃ r lpgicrl pne.
Reset Command
Wꢂiaing ahe ꢂeꢃea cpmmrnd ap ahe device ꢂeꢃeaꢃ ahe device
ap ꢂerding rꢂꢂrꢄ drar. Addꢂeꢃꢃ biaꢃ rꢂe dpn’a crꢂe fpꢂ ahiꢃ
cpmmrnd.
The ꢂeꢃea cpmmrnd mrꢄ be oꢂiaaen beaoeen ahe ꢃeqsence
cꢄcleꢃ in rn eꢂrꢃe cpmmrnd ꢃeqsence befpꢂe eꢂrꢃing beginꢃ.
Thiꢃ ꢂeꢃeaꢃ ahe device ap ꢂerding rꢂꢂrꢄ drar. Once eꢂrꢃsꢂe
beginꢃ, hpoeveꢂ, ahe device ignpꢂeꢃ ꢂeꢃea cpmmrndꢃ snail ahe
pꢁeꢂraipn iꢃ cpmꢁleae.
The ꢂeꢃea cpmmrnd mrꢄ be oꢂiaaen beaoeen ahe ꢃeqsence
cꢄcleꢃ in r ꢁꢂpgꢂrm cpmmrnd ꢃeqsence befpꢂe ꢁꢂpgꢂrmming
beginꢃ. Thiꢃ ꢂeꢃeaꢃ ahe device ap ꢂerding rꢂꢂrꢄ drar. Once
ꢁꢂpgꢂrmming beginꢃ, hpoeveꢂ, ahe device ignpꢂeꢃ ꢂeꢃea cpm-
mrndꢃ snail ahe pꢁeꢂraipn iꢃ cpmꢁleae.
The ꢂeꢃea cpmmrnd mrꢄ be oꢂiaaen beaoeen ahe ꢃeqsence
cꢄcleꢃ in rn rsapꢃeleca cpmmrnd ꢃeqsence. Once in ahe
rsapꢃeleca mpde, ahe ꢂeꢃea cpmmrnd must be oꢂiaaen ap ꢂeasꢂn
ap ꢂerding rꢂꢂrꢄ drar.
Power-Up Write Inhibit
If WE\ = CE\ = VIL rnd OE\ = VIH dsꢂing ꢁpoeꢂ sꢁ, ahe
device dpeꢃ npa rcceꢁa cpmmrndꢃ pn ahe ꢂiꢃing edge pf WE\.
The inaeꢂnrl ꢃarae mrchine iꢃ rsapmraicrllꢄ ꢂeꢃea ap ꢂerding
rꢂꢂrꢄ drar pn ꢁpoeꢂ-sꢁ.
COMMAND DEFINITIONS
Wꢂiaing ꢃꢁecific rddꢂeꢃꢃ rnd drar cpmmrndꢃ pꢂ ꢃeqsenceꢃ
inap ahe cpmmrnd ꢂegiꢃaeꢂ iniairaeꢃ device pꢁeꢂraipnꢃ. The
Cpmmrnd Definiaipnꢃ arble defineꢃ ahe vrlid ꢂegiꢃaeꢂ cpmmrnd
ꢃeqsenceꢃ. Wꢂiaing incorrect address and data values pꢂ
oꢂiaing ahem in ahe improper sequence ꢂeꢃeaꢃ ahe device ap
ꢂerding rꢂꢂrꢄ drar.
All rddꢂeꢃꢃeꢃ rꢂe lrached pn ahe frlling edge pf WE\ pꢂ
CE\, ohicheveꢂ hrꢁꢁenꢃ fiꢂꢃa. Refeꢂ ap ahe rꢁꢁꢂpꢁꢂirae aiming
dirgꢂrmꢃ in ahe “AC Chrꢂrcaeꢂiꢃaicꢃ” ꢃecaipn.
If DQ5 gpeꢃ high dsꢂing r ꢁꢂpgꢂrm pꢂ eꢂrꢃe pꢁeꢂraipn,
oꢂiaing ahe ꢂeꢃea cpmmrnd ꢂeasꢂnꢃ ahe device ap ꢂerding rꢂꢂrꢄ
drar.
TABLE 3: Autoselect Codes (High Voltage Method)
A8
to
A7
A5
to
A2
A16 to A13 to
A14 A10
DESCRIPTION
CE\
OE\ WE\
A9
A6
A1
A0 DQ7 to DQ0
Manufacturer ID
Device ID
L
L
L
L
H
H
X
X
X
X
V
V
X
X
L
L
X
X
L
L
L
01h
20h
ID
H
ID
01h
(protected)
Sector Protection
Verification
L
L
H
SA
X
V
X
L
X
H
L
ID
00h
(unprotected)
NOTE: L = Lpgic Lpo = VIL, H = Lpgic High = VIH, SA = Secapꢂ Addꢂeꢃꢃ, X = Dpn’a Crꢂe
AS29F010
Rev. 2.3 12/08
6
AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.