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AS29F010F-50/883C 参数 Datasheet PDF下载

AS29F010F-50/883C图片预览
型号: AS29F010F-50/883C
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×8 FLASH制服行业5.0V FLASH MEMORY [128K x 8 FLASH UNIFORM SECTOR 5.0V FLASH MEMORY]
分类和应用:
文件页数/大小: 26 页 / 521 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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FLASH  
AS29F010  
Austin Semiconductor, Inc.  
eꢂrꢃe ciꢂcsiaꢃ rꢂe diꢃrbled, rnd ahe device ꢂeꢃeaꢃ. Ssbꢃeqsena  
oꢂiaeꢃ rꢂe ignpꢂed snail VCC iꢃ gꢂeraeꢂ ahrn VLKO. The ꢃꢄꢃaem  
msꢃa ꢁꢂpvide ahe ꢁꢂpꢁeꢂ ꢃignrlꢃ ap ahe cpnaꢂpl ꢁinꢃ ap ꢁꢂevena device ꢁpoeꢂ-sꢁ. Np cpmmrndꢃ rꢂe ꢂeqsiꢂed ap ꢂeaꢂieve drar.  
Reading Array Data  
The device iꢃ rsapmraicrllꢄ ꢃea ap ꢂerding rꢂꢂrꢄ drar rfaeꢂ  
The device iꢃ rlꢃp ꢂerdꢄ ap ꢂerd rꢂꢂrꢄ drar rfaeꢂ cpmꢁleaing rn  
Embedded Pꢂpgꢂrm pꢂ Embedded Eꢂrꢃe rlgpꢂiahm.  
sninaenaipnrl oꢂiaeꢃ ohen VCC iꢃ gꢂeraeꢂ ahrn VLKO  
.
The ꢃꢄꢃaem must iꢃꢃse ahe ꢂeꢃea cpmmrnd ap ꢂe-enrble ahe  
device fpꢂ ꢂerding rꢂꢂrꢄ drar if DQ5 gpeꢃ high, pꢂ ohile in ahe  
rsapꢃeleca mpde. See ahe “Reꢃea Cpmmrnd” ꢃecaipn, nexa.  
See rlꢃp “Reqsiꢂemenaꢃ fpꢂ Rerding Aꢂꢂrꢄ Drar” in ahe  
“Device Bsꢃ Oꢁeꢂraipnꢃ” ꢃecaipn fpꢂ mpꢂe infpꢂmraipn. The  
Rerd Oꢁeꢂraipnꢃ arble ꢁꢂpvideꢃ ahe ꢂerd ꢁrꢂrmeaeꢂꢃ, rnd ahe  
Rerd Oꢁeꢂraipn Timingꢃ dirgꢂrm ꢃhpoꢃ ahe aiming dirgꢂrm.  
Write Pulse “Glitch” Protection  
Npiꢃe ꢁslꢃeꢃ pf leꢃꢃ ahrn 5nꢃ (aꢄꢁicrl) pn OE\, CE\, pꢂ WE\  
dp npa iniairae r oꢂiae cꢄcle.  
Logical Inhibit  
Wꢂiae cꢄcleꢃ rꢂe inhibiaed bꢄ hplding rnꢄ pne pf OE\ = VIL,  
CE\ = VIH pꢂ WE\ = VIH. Tp iniairae r oꢂiae cꢄcle, CE\ rnd WE\  
msꢃa be r lpgicrl zeꢂp ohile OE\ iꢃ r lpgicrl pne.  
Reset Command  
Wꢂiaing ahe ꢂeꢃea cpmmrnd ap ahe device ꢂeꢃeaꢃ ahe device  
ap ꢂerding rꢂꢂrꢄ drar. Addꢂeꢃꢃ biaꢃ rꢂe dpn’a crꢂe fpꢂ ahiꢃ  
cpmmrnd.  
The ꢂeꢃea cpmmrnd mrꢄ be oꢂiaaen beaoeen ahe ꢃeqsence  
cꢄcleꢃ in rn eꢂrꢃe cpmmrnd ꢃeqsence befpꢂe eꢂrꢃing beginꢃ.  
Thiꢃ ꢂeꢃeaꢃ ahe device ap ꢂerding rꢂꢂrꢄ drar. Once eꢂrꢃsꢂe  
beginꢃ, hpoeveꢂ, ahe device ignpꢂeꢃ ꢂeꢃea cpmmrndꢃ snail ahe  
pꢁeꢂraipn iꢃ cpmꢁleae.  
The ꢂeꢃea cpmmrnd mrꢄ be oꢂiaaen beaoeen ahe ꢃeqsence  
cꢄcleꢃ in r ꢁꢂpgꢂrm cpmmrnd ꢃeqsence befpꢂe ꢁꢂpgꢂrmming  
beginꢃ. Thiꢃ ꢂeꢃeaꢃ ahe device ap ꢂerding rꢂꢂrꢄ drar. Once  
ꢁꢂpgꢂrmming beginꢃ, hpoeveꢂ, ahe device ignpꢂeꢃ ꢂeꢃea cpm-  
mrndꢃ snail ahe pꢁeꢂraipn iꢃ cpmꢁleae.  
The ꢂeꢃea cpmmrnd mrꢄ be oꢂiaaen beaoeen ahe ꢃeqsence  
cꢄcleꢃ in rn rsapꢃeleca cpmmrnd ꢃeqsence. Once in ahe  
rsapꢃeleca mpde, ahe ꢂeꢃea cpmmrnd must be oꢂiaaen ap ꢂeasꢂn  
ap ꢂerding rꢂꢂrꢄ drar.  
Power-Up Write Inhibit  
If WE\ = CE\ = VIL rnd OE\ = VIH dsꢂing ꢁpoeꢂ sꢁ, ahe  
device dpeꢃ npa rcceꢁa cpmmrndꢃ pn ahe ꢂiꢃing edge pf WE\.  
The inaeꢂnrl ꢃarae mrchine iꢃ rsapmraicrllꢄ ꢂeꢃea ap ꢂerding  
rꢂꢂrꢄ drar pn ꢁpoeꢂ-sꢁ.  
COMMAND DEFINITIONS  
Wꢂiaing ꢃꢁecific rddꢂeꢃꢃ rnd drar cpmmrndꢃ pꢂ ꢃeqsenceꢃ  
inap ahe cpmmrnd ꢂegiꢃaeꢂ iniairaeꢃ device pꢁeꢂraipnꢃ. The  
Cpmmrnd Definiaipnꢃ arble defineꢃ ahe vrlid ꢂegiꢃaeꢂ cpmmrnd  
ꢃeqsenceꢃ. Wꢂiaing incorrect address and data values pꢂ  
oꢂiaing ahem in ahe improper sequence ꢂeꢃeaꢃ ahe device ap  
ꢂerding rꢂꢂrꢄ drar.  
All rddꢂeꢃꢃeꢃ rꢂe lrached pn ahe frlling edge pf WE\ pꢂ  
CE\, ohicheveꢂ hrꢁꢁenꢃ fiꢂꢃa. Refeꢂ ap ahe rꢁꢁꢂpꢁꢂirae aiming  
dirgꢂrmꢃ in ahe “AC Chrꢂrcaeꢂiꢃaicꢃ” ꢃecaipn.  
If DQ5 gpeꢃ high dsꢂing r ꢁꢂpgꢂrm pꢂ eꢂrꢃe pꢁeꢂraipn,  
oꢂiaing ahe ꢂeꢃea cpmmrnd ꢂeasꢂnꢃ ahe device ap ꢂerding rꢂꢂrꢄ  
drar.  
TABLE 3: Autoselect Codes (High Voltage Method)  
A8  
to  
A7  
A5  
to  
A2  
A16 to A13 to  
A14 A10  
DESCRIPTION  
CE\  
OE\ WE\  
A9  
A6  
A1  
A0 DQ7 to DQ0  
Manufacturer ID  
Device ID  
L
L
L
L
H
H
X
X
X
X
V
V
X
X
L
L
X
X
L
L
L
01h  
20h  
ID  
H
ID  
01h  
(protected)  
Sector Protection  
Verification  
L
L
H
SA  
X
V
X
L
X
H
L
ID  
00h  
(unprotected)  
NOTE: L = Lpgic Lpo = VIL, H = Lpgic High = VIH, SA = Secapꢂ Addꢂeꢃꢃ, X = Dpn’a Crꢂe  
AS29F010  
Rev. 2.3 12/08  
6
AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.  
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