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AS29F010F-50/883C 参数 Datasheet PDF下载

AS29F010F-50/883C图片预览
型号: AS29F010F-50/883C
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×8 FLASH制服行业5.0V FLASH MEMORY [128K x 8 FLASH UNIFORM SECTOR 5.0V FLASH MEMORY]
分类和应用:
文件页数/大小: 26 页 / 521 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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FLASH  
AS29F010  
Austin Semiconductor, Inc.  
GENERAL DESCRIPTION  
The AS29F0±0 iꢃ r ±Mbia, 5.0 Vpla-pnlꢄ FLASH mempꢂꢄ  
Device eꢂrꢃsꢂe pccsꢂꢃ bꢄ execsaing ahe eꢂrꢃe cpmmrnd  
pꢂgrnized rꢃ ±3±,072 bꢄaeꢃ. The AS29F0±0 iꢃ pffeꢂed in r 32-ꢁin ꢃeqsence. Thiꢃ invpkeꢃ ahe Embedded Eꢂrꢃe rlgpꢂiahm -- rn  
CDIP ꢁrckrge. The bꢄae-oide drar rꢁꢁerꢂꢃ pn DQ0-DQ7. The inaeꢂnrl rlgpꢂiahm ahra rsapmraicrllꢄ ꢁꢂeꢁꢂpgꢂrmꢃ ahe rꢂꢂrꢄ (if ia  
device iꢃ deꢃigned ap be ꢁꢂpgꢂrmmed in-ꢃꢄꢃaem oiah ahe iꢃ npa rlꢂerdꢄ ꢁꢂpgꢂrmmed) befpꢂe execsaing ahe eꢂrꢃe  
pꢁeꢂraipn. Dsꢂing eꢂrꢃe, ahe device rsapmraicrllꢄ aimeꢃ ahe  
eꢂrꢃe ꢁslꢃe oidahꢃ rnd veꢂifieꢃ ꢁꢂpꢁeꢂ cell mrꢂgin.  
The hpꢃa ꢃꢄꢃaem crn deaeca oheaheꢂ r ꢁꢂpgꢂrm pꢂ eꢂrꢃe  
pꢁeꢂraipn iꢃ cpmꢁleae bꢄ ꢂerding ahe DQ7 (Drar\Pplling) rnd  
DQ6 (apggle) ꢃarasꢃ biaꢃ. Afaeꢂ r ꢁꢂpgꢂrm pꢂ eꢂrꢃe cꢄcle hrꢃ  
been cpmꢁleaed, ahe device iꢃ ꢂerdꢄ ap ꢂerd rꢂꢂrꢄ drar pꢂ rcceꢁa  
rnpaheꢂ cpmmrnd.  
The ꢃecapꢂ eꢂrꢃe rꢂchiaecasꢂe rllpoꢃ mempꢂꢄ ꢃecapꢂꢃ ap be  
eꢂrꢃed rnd ꢂeꢁꢂpgꢂrmmed oiahpsa rffecaing ahe drar cpnaenaꢃ  
pf paheꢂ ꢃecapꢂꢃ. The device iꢃ eꢂrꢃed ohen ꢃhiꢁꢁed fꢂpm ahe  
frcapꢂꢄ.  
ꢃarndrꢂd ꢃꢄꢃaem 5.0 Vpla VCC ꢃsꢁꢁlꢄ. A ±2.0 vpla VPP iꢃ npa  
ꢂeqsiꢂed fpꢂ ꢁꢂpgꢂrm pꢂ eꢂrꢃe pꢁeꢂraipnꢃ. The device crn rlꢃp  
be ꢁꢂpgꢂrmmed pꢂ eꢂrꢃed in ꢃarndrꢂd EPROM ꢁꢂpgꢂrmmeꢂꢃ.  
Thiꢃ device iꢃ mrnsfrcasꢂed sꢃing 0.32 µm ꢁꢂpceꢃꢃ  
aechnplpgꢄ. Ia iꢃ rvrilrble oiah rcceꢃꢃ aimeꢃ pf 50, 60, 70, 90,  
±20, rnd ±50nꢃ, rllpoing high-ꢃꢁeed micꢂpꢁꢂpceꢃꢃpꢂꢃ ap  
pꢁeꢂrae oiahpsa oria ꢃaraeꢃ. Tp eliminrae bsꢃ cpnaenaipn ahe  
device hrꢃ ꢃeꢁrꢂrae chiꢁ enrble (CE\), oꢂiae enrble (WE\), rnd  
psaꢁsa enrble (OE\) cpnaꢂplꢃ.  
The device ꢂeqsiꢂeꢃ pnlꢄ r ꢃingle 5.0 vpla ꢁpoeꢂ ꢃsꢁꢁlꢄ fpꢂ  
bpah ꢂerd rnd oꢂiae fsncaipnꢃ. Inaeꢂnrllꢄ geneꢂraed rnd  
ꢂegslraed vplargeꢃ rꢂe ꢁꢂpvided fpꢂ ahe ꢁꢂpgꢂrm rnd eꢂrꢃe  
pꢁeꢂraipnꢃ.  
The hrꢂdorꢂe drar ꢁꢂpaecaipn merꢃsꢂeꢃ inclsde r lpo VCC  
deaecapꢂ ahra rsapmraicrllꢄ inhibiaꢃ oꢂiae pꢁeꢂraipnꢃ dsꢂing  
The device iꢃ enaiꢂelꢄ cpmmrnd ꢃea cpmꢁraible oiah ahe ꢁpoeꢂ aꢂrnꢃiaipnꢃ. The hrꢂdorꢂe ꢃecapꢂ ꢁꢂpaecaipn ferasꢂe  
JEDEC ꢃingle-ꢁpoeꢂ-ꢃsꢁꢁlꢄ FLASH ꢃarndrꢂd. Cpmmrndꢃ rꢂe diꢃrbleꢃ bpah ꢁꢂpgꢂrm rnd eꢂrꢃe pꢁeꢂraipnꢃ in rnꢄ  
oꢂiaaen ap ahe cpmmrnd ꢂegiꢃaeꢂ sꢃing ꢃarndrꢂd micꢂpꢁꢂpceꢃꢃpꢂ cpmbinraipn pf ahe ꢃecapꢂꢃ pf mempꢂꢄ, rnd iꢃ imꢁlemenaed  
oꢂiae aimingꢃ. Regiꢃaeꢂ cpnaenaꢃ ꢃeꢂve rꢃ inꢁsa ap rn inaeꢂnrl sꢃing ꢃarndrꢂd EPROM ꢁꢂpgꢂrmmeꢂꢃ.  
ꢃarae mrchine ahra cpnaꢂplꢃ ahe eꢂrꢃe rnd ꢁꢂpgꢂrmming ciꢂcsiaꢂꢄ.  
The ꢃꢄꢃaem crn ꢁlrce ahe device inap ahe ꢃarndbꢄ mpde.  
Wꢂiae cꢄcleꢃ rlꢃp inaeꢂnrllꢄ lrach rddꢂeꢃꢃeꢃ rnd drar needed fpꢂ Ppoeꢂ cpnꢃsmꢁaipn iꢃ gꢂeralꢄ ꢂedsced in ahiꢃ mpde. The  
ahe ꢁꢂpgꢂrmming rnd eꢂrꢃe pꢁeꢂraipnꢃ. Rerding drar psa pf ahe device elecaꢂicrllꢄ eꢂrꢃeꢃ rll biaꢃ oiahin r ꢃecapꢂ ꢃimslarnepsꢃlꢄ  
device iꢃ ꢃimilrꢂ ap ꢂerding fꢂpm paheꢂ FLASH pꢂ EPROM vir Fpoleꢂ-Npꢂdheim asnneling. The bꢄaeꢃ rꢂe ꢁꢂpgꢂrmmed  
deviceꢃ.  
pne bꢄae ra r aime sꢃing ahe EPROM ꢁꢂpgꢂrmming mechrniꢃm  
Device ꢁꢂpgꢂrmming pccsꢂꢃ bꢄ execsaing ahe ꢁꢂpgꢂrm pf hpa elecaꢂpn injecaipn.  
cpmmrnd ꢃeqsence. Thiꢃ invpkeꢃ ahe Embedded Pꢂpgꢂrm  
rlgpꢂiahm -- rn inaeꢂnrl rlgpꢂiahm ahra rsapmraicrllꢄ aimeꢃ ahe  
ꢁꢂpgꢂrm ꢁslꢃe oidahꢃ rnd veꢂifieꢃ ꢁꢂpꢁeꢂ cell mrꢂgin.  
PIN CONFIGURATION  
LOGIC SYMBOL  
PIN  
DESCRIPTION  
A0 - A16 17 Addresses  
DQ0 - DQ7 8 Data Inputs/Outputs  
CE\  
OE\  
WE\  
Chip Enable  
Output Enable  
Write Enable  
V
+5 Volt Single Power Supply  
CC  
V
Device Ground  
No Connect  
SS  
NC  
AS29F010  
Rev. 2.3 12/08  
AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.  
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