FLASH
AS29F010
Austin Semiconductor, Inc.
GENERAL DESCRIPTION
The AS29F010 is a 1Mbit, 5.0 Volt-only FLASH memory
Device erasure occurs by executing the erase command
organized as 131,072 bytes. The AS29F010 is offered in a 32-pin sequence. This invokes the Embedded Erase algorithm -- an
CDIP package. The byte-wide data appears on DQ0-DQ7. The internal algorithm that automatically preprograms the array (if it
device is designed to be programmed in-system with the is not already programmed) before executing the erase
operation. During erase, the device automatically times the
erase pulse widths and verifies proper cell margin.
The host system can detect whether a program or erase
operation is complete by reading the DQ7 (Data\Polling) and
DQ6 (toggle) status bits. After a program or erase cycle has
been completed, the device is ready to read array data or accept
another command.
The sector erase architecture allows memory sectors to be
erased and reprogrammed without affecting the data contents
of other sectors. The device is erased when shipped from the
factory.
standard system 5.0 Volt VCC supply. A 12.0 volt VPP is not
required for program or erase operations. The device can also
be programmed or erased in standard EPROM programmers.
This device is manufactured using 0.32 µm process
technology. It is available with access times of 50, 60, 70, 90,
120, and 150ns, allowing high-speed microprocessors to
operate without wait states. To eliminate bus contention the
device has separate chip enable (CE\), write enable (WE\), and
output enable (OE\) controls.
The device requires only a single 5.0 volt power supply for
both read and write functions. Internally generated and
regulated voltages are provided for the program and erase
operations.
The hardware data protection measures include a low VCC
detector that automatically inhibits write operations during
The device is entirely command set compatible with the power transitions. The hardware sector protection feature
JEDEC single-power-supply FLASH standard. Commands are disables both program and erase operations in any
written to the command register using standard microprocessor combination of the sectors of memory, and is implemented
write timings. Register contents serve as input to an internal using standard EPROM programmers.
state machine that controls the erase and programming circuitry.
The system can place the device into the standby mode.
Write cycles also internally latch addresses and data needed for Power consumption is greatly reduced in this mode. The
the programming and erase operations. Reading data out of the device electrically erases all bits within a sector simultaneously
device is similar to reading from other FLASH or EPROM via Fowler-Nordheim tunneling. The bytes are programmed
devices.
one byte at a time using the EPROM programming mechanism
Device programming occurs by executing the program of hot electron injection.
command sequence. This invokes the Embedded Program
algorithm -- an internal algorithm that automatically times the
program pulse widths and verifies proper cell margin.
PIN CONFIGURATION
LOGIC SYMBOL
PIN
DESCRIPTION
A0 - A16 17 Addresses
DQ0 - DQ7 8 Data Inputs/Outputs
CE\
OE\
WE\
Chip Enable
Output Enable
Write Enable
V
+5 Vold Single Power Supply
CC
V
Device Ground
No Connect
SS
NC
AS29F010
Rev. 0.3 10/02
AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.
2
AUSTIN [ AUSTIN SEMICONDUCTOR ]
