EEPROM
AS28C010
Austin Semiconductor, Inc.
PAGE WRITE CYCLE
OE\*
CE\
WE\
tWP
tBLC
tWPH
ADDRESS **
LAST BYTE
BYTE n+2
I/O
BYTE 2
BYTE n
BYTE n+1
BYTE 0
BYTE 1
*
Between successive byte writes within a page write operation, OE\ can bee strobed LOW: e.g. this can be done with CE\ and WE\
HIGH to fetch data from another memory device within the system for the next write; or with WE\ HIGH and CE\ LOW effectively
performing a polling operation.
**: 1- For each successive write within the page write operation A8-A16 should be the same or writes to an unknown address could occur.
2– The timings shown above are unique to page write operations. Individual byte load operations within the page write must conform
to either CE\ or WE\ controlled write cycle timing.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS28C010
Rev. 1.5 5/06
10
AUSTIN [ AUSTIN SEMICONDUCTOR ]
