2N5401N
Absolute Maximum Ratings
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Rating
-160
-160
-5
-600
400
150
-55~150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
(Ta=25°C)
Symbol
BV
CEO
I
CBO
I
EBO
h
FE (1)
h
FE (2)
h
FE (3)
V
CE(sat)(1)
*
V
CE(sat)(2)
*
V
BE(sat)(1)
*
V
BE(sat)(2)
*
V
BE
f
T
C
ob
Test Condition
I
C
=-1mA, I
B
=0
V
CB
=-160V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-5V, I
C
=-1mA
V
CE
=-5V, I
C
=-10mA
V
CE
=-5V, I
C
=-50mA
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
V
CE
=-5V, I
C
=-50mA
V
CE
=-10V, I
C
=-10mA
V
CB
=-10V, I
E
=0, f=1MHz
Min. Typ. Max.
-160
-
-
50
60
50
-
-
-
-
-
100
-
-
-
-
-
-
-
-
-
-
-
-0.7
-
-
-0.2
-0.5
-1
-1
-0.9
400
6
240
-
-100
-100
Unit
V
nA
nA
-
-
-
V
V
V
V
V
MHz
pF
*
: Pulse Tester : Pulse Width
≤300µs,
Duty Cycle
≤2.0%
KSD-T0C040-000
2