Semiconductor
2N5401N
PNP Silicon Transistor
Description
•
General purpose amplifier
•
High voltage application
Features
•
High collector breakdown voltage : V
CBO
= -160V, V
CEO
= -160V
•
Low collector saturation voltage : V
CE(sat)
=-0.5V(MAX.)
•
Complementary pair with 2N5551N
Ordering Information
Type NO.
2N5401N
Marking
2N5401
Package Code
TO-92N
Outline Dimensions
unit :
mm
4.20~4.40
4.20~4.40
2.25 Max.
0.52 Max.
13.50~14.50
0.90 Max.
1.27 Typ.
2.14 Typ.
1 2 3
3.55 Typ
3.09~3.29
0.40 Max.
PIN Connections
1. Emitter
2. Base
3. Collector
KSD-T0C040-000
1