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ATMEGA16U2-MUR 参数 Datasheet PDF下载

ATMEGA16U2-MUR图片预览
型号: ATMEGA16U2-MUR
PDF下载: 下载PDF文件 查看货源
内容描述: 8位微控制器具有ISP功能的Flash 8/16 / 32K Butes [8-bit Microcontroller with 8/16/32K Butes of ISP Flash]
分类和应用: 微控制器异步传输模式PCATM
文件页数/大小: 310 页 / 4432 K
品牌: ATMEL [ ATMEL ]
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ATmega8U2/16U2/32U2  
25.9.1  
Serial Programming Algorithm  
When writing serial data to the ATmega8U2/16U2/32U2, data is clocked on the rising edge of  
SCK.  
When reading data from the ATmega8U2/16U2/32U2, data is clocked on the falling edge of  
SCK. See Figure 25-8 for timing details.  
To program and verify the ATmega8U2/16U2/32U2 in the serial programming mode, the follow-  
ing sequence is recommended (See four byte instruction formats in Table 25-16):  
1. Power-up sequence:  
Apply power between VCC and GND while RESET and SCK are set to “0”. In some sys-  
tems, the programmer can not guarantee that SCK is held low during power-up. In this  
case, RESET must be given a positive pulse of at least two CPU clock cycles duration  
after SCK has been set to “0”.  
2. Wait for at least 20 ms and enable serial programming by sending the Programming  
Enable serial instruction to pin PDI.  
3. The serial programming instructions will not work if the communication is out of syn-  
chronization. When in sync. the second byte (0x53), will echo back when issuing the  
third byte of the Programming Enable instruction. Whether the echo is correct or not, all  
four bytes of the instruction must be transmitted. If the 0x53 did not echo back, give  
RESET a positive pulse and issue a new Programming Enable command.  
4. The Flash is programmed one page at a time. The memory page is loaded one byte at  
a time by supplying the 7 LSB of the address and data together with the Load Program  
Memory Page instruction. To ensure correct loading of the page, the data low byte must  
be loaded before data high byte is applied for a given address. The Program Memory  
Page is stored by loading the Write Program Memory Page instruction with the address  
lines 15..8. Before issuing this command, make sure the instruction Load Extended  
Address Byte has been used to define the MSB of the address. The extended address  
byte is stored until the command is re-issued, i.e., the command needs only to be  
issued for the first page, since the memory size is not larger than 64KWord. If polling  
(RDY/BSY) is not used, the user must wait at least tWD_FLASH before issuing the next  
page. (See Table 25-15.) Accessing the serial programming interface before the Flash  
write operation completes can result in incorrect programming.  
5. The EEPROM array is programmed one byte at a time by supplying the address and  
data together with the appropriate Write instruction. An EEPROM memory location is  
first automatically erased before new data is written. If polling is not used, the user must  
wait at least tWD_EEPROM before issuing the next byte. (See Table 25-15.) In a chip  
erased device, no 0xFFs in the data file(s) need to be programmed.  
6. Any memory location can be verified by using the Read instruction which returns the  
content at the selected address at serial output PDO. When reading the Flash memory,  
use the instruction Load Extended Address Byte to define the upper address byte,  
which is not included in the Read Program Memory instruction. The extended address  
byte is stored until the command is re-issued, i.e., the command needs only to be  
issued for the first page, since the memory size is not larger than 64KWord.  
7. At the end of the programming session, RESET can be set high to commence normal  
operation.  
8. Power-off sequence (if needed):  
Set RESET to “1”.  
Turn VCC power off.  
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7799D–AVR–11/10  
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