Table 18-3. DC Characteristics
Symbol
Parameter
Condition
Min
Typ
Max
Units
CS, RESET, WP = VIH, all
inputs at CMOS levels
IDP
Deep Power-down Current
15
25
µA
CS, RESET, WP = VIH, all
inputs at CMOS levels
ISB
Standby Current
25
7
50
10
12
14
15
17
µA
mA
mA
mA
mA
mA
f = 20 MHz; IOUT = 0 mA;
VCC = 3.6V
f = 33 MHz; IOUT = 0 mA;
VCC = 3.6V
8
Active Current, Read
Operation
(1)
ICC1
f = 50 MHz; IOUT = 0 mA;
VCC = 3.6V
10
11
12
f = 66 MHz; IOUT = 0 mA;
VCC = 3.6V
Active Current, Program/Erase
Operation
ICC2
VCC = 3.6V
ILI
Input Load Current
Output Leakage Current
Input Low Voltage
VIN = CMOS levels
VI/O = CMOS levels
1
1
µA
µA
V
ILO
VIL
VIH
VOL
VOH
VCC x 0.3
Input High Voltage
Output Low Voltage
Output High Voltage
VCC x 0.7
V
IOL = 1.6 mA; VCC = 2.7V
IOH = -100 µA
0.4
V
VCC - 0.2V
V
Notes: 1. ICC1 during a buffer read is 20 mA maximum @ 20 MHz.
2. All inputs (SI, SCK, CS#, WP#, and RESET#) are guaranteed by design to be 5-Volt tolerant.
34
AT45DB161D
3500M–DFLASH–04/09