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AT45DB041D-SU-SL954 参数 Datasheet PDF下载

AT45DB041D-SU-SL954图片预览
型号: AT45DB041D-SU-SL954
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位2.5伏或2.7伏的DataFlash [4-megabit 2.5-volt or 2.7-volt DataFlash]
分类和应用: 闪存存储内存集成电路光电二极管异步传输模式ATM时钟
文件页数/大小: 53 页 / 1649 K
品牌: ATMEL [ ATMEL ]
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4. Memory Array  
To provide optimal flexibility, the memory array of the AT45DB041D is divided into three levels of  
granularity comprising of sectors, blocks, and pages. The “Memory Architecture Diagram” illus-  
trates the breakdown of each level and details the number of pages per sector and block. All  
program operations to the DataFlash occur on a page-by-page basis. The erase operations can  
be performed at the chip, sector, block or page level.  
Figure 4-1. Memory Architecture Diagram  
SECTOR ARCHITECTURE  
BLOCK ARCHITECTURE  
PAGE ARCHITECTURE  
BLOCK 0  
BLOCK 1  
BLOCK 2  
8 Pages  
PAGE 0  
PAGE 1  
SECTOR 0a  
SECTOR 0a = 8 Pages  
2,048/2,112 bytes  
SECTOR 0b = 248 Pages  
63,488/65,472 bytes  
PAGE 6  
PAGE 7  
PAGE 8  
PAGE 9  
BLOCK 30  
BLOCK 31  
BLOCK 32  
BLOCK 33  
SECTOR 1 = 256 Pages  
65,536/67,584 bytes  
SECTOR 2 = 256 Pages  
65,536/67,584 bytes  
PAGE 14  
PAGE 15  
PAGE 16  
PAGE 17  
PAGE 18  
BLOCK 62  
BLOCK 63  
BLOCK 64  
BLOCK 65  
SECTOR 6 = 256 Pages  
65,536/67,584 bytes  
SECTOR 7 = 256 Pages  
65,536/67,584 bytes  
BLOCK 254  
BLOCK 255  
PAGE 2,046  
PAGE 2,047  
Block = 2,048/2,112 bytes  
Page = 256/264 bytes  
5. Device Operation  
The device operation is controlled by instructions from the host processor. The list of instructions  
and their associated opcodes are contained in Tables 15-1 through 15-7. A valid instruction  
starts with the falling edge of CS followed by the appropriate 8-bit opcode and the desired buffer  
or main memory address location. While the CS pin is low, toggling the SCK pin controls the  
loading of the opcode and the desired buffer or main memory address location through the SI  
(serial input) pin. All instructions, addresses, and data are transferred with the most significant  
bit (MSB) first.  
Buffer addressing for the DataFlash standard page size (264 bytes) is referenced in the  
datasheet using the terminology BEA8 - BFA0 to denote the 9 address bits required to designate  
a byte address within a buffer. Main memory addressing is referenced using the terminology  
PA10 - PA0 and BA8 - BA0, where PA10 - PA0 denotes the 11 address bits required to desig-  
nate a page address and BA8 - BA0 denotes the 9 address bits required to designate a byte  
address within the page.  
For the “Power of 2” binary page size (256 bytes), the Buffer addressing is referenced in the  
datasheet using the conventional terminology BFA7 - BFA0 to denote the 8 address bits  
required to designate a byte address within a buffer. Main memory addressing is referenced  
using the terminology A18 - A0, where A18 - A8 denotes the 11 address bits required to desig-  
nate a page address and A7 - A0 denotes the 8 address bits required to designate a byte  
address within a page.  
4
AT45DB041D  
3595L–DFLASH–4/08  
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