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AT45DB642D-CNU 参数 Datasheet PDF下载

AT45DB642D-CNU图片预览
型号: AT45DB642D-CNU
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆位2.7伏双接口的DataFlash [64-megabit 2.7-volt Dual-interface DataFlash]
分类和应用: 闪存存储内存集成电路时钟
文件页数/大小: 55 页 / 1361 K
品牌: ATMEL [ ATMEL ]
 浏览型号AT45DB642D-CNU的Datasheet PDF文件第7页浏览型号AT45DB642D-CNU的Datasheet PDF文件第8页浏览型号AT45DB642D-CNU的Datasheet PDF文件第9页浏览型号AT45DB642D-CNU的Datasheet PDF文件第10页浏览型号AT45DB642D-CNU的Datasheet PDF文件第12页浏览型号AT45DB642D-CNU的Datasheet PDF文件第13页浏览型号AT45DB642D-CNU的Datasheet PDF文件第14页浏览型号AT45DB642D-CNU的Datasheet PDF文件第15页  
AT45DB642D  
7.6  
Sector Erase  
The Sector Erase command can be used to individually erase any sector in the main memory.  
There are 32 sectors and only one sector can be erased at one time. To perform sector 0a or  
sector 0b erase for the standard DataFlash page size (1056 bytes), an opcode of 7CH must be  
loaded into the device, followed by three address bytes comprised of 10 page address bits  
(PA12 - PA3) and 14 don’t care bits. To perform a sector 1-31 erase, the opcode 7CH must be  
loaded into the device, followed by three address bytes comprised of 5 page address bits (PA12  
- PA8) and 19 don’t care bits. To perform sector 0a or sector 0b erase for the binary page size  
(1024 bytes), an opcode of 7CH must be loaded into the device, followed by three address bytes  
comprised of 1 don’t care bit and 10 page address bits (A22 - A13) and 13 don’t care bits. To  
perform a sector 1-31 erase, the opcode 7CH must be loaded into the device, followed by three  
address bytes comprised of 1 don’t care bit and 5 page address bits (PA12 - PA8) and 18 don’t  
care bits. The page address bits are used to specify any valid address location within the sector  
which is to be erased. When a low-to-high transition occurs on the CS pin, the part will erase the  
selected sector. The erase operation is internally self-timed and should take place in a maximum  
time of tSE. During this time, the status register and the RDY/BUSY pin will indicate that the part  
is busy.  
Table 7-2.  
Sector Erase Addressing  
PA12/  
A22  
PA11/  
A21  
PA10/  
A20  
PA9/  
A19  
PA8/  
A18  
PA7/  
A17  
PA6/  
A16  
PA5/  
A15  
PA4/  
A14  
PA3/  
A13  
PA2/  
A12  
PA1/  
A11  
PA0/  
A10  
Sector  
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
0
0
1
0
0
0
0
0
0
0
0
0
0
1
X
X
X
X
X
X
X
X
X
X
X
X
0a  
0b  
1
X
X
X
X
X
X
X
X
X
X
2
1
1
1
1
1
1
1
1
1
1
1
1
0
0
1
1
0
1
0
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
28  
29  
30  
31  
7.7  
Chip Erase(1)  
The entire main memory can be erased at one time by using the Chip Erase command.  
To execute the Chip Erase command, a 4-byte command sequence C7H, 94H, 80H and 9AH  
must be clocked into the device. Since the entire memory array is to be erased, no address  
bytes need to be clocked into the device, and any data clocked in after the opcode will be  
ignored. After the last bit of the opcode sequence has been clocked in, the CS pin can be deas-  
serted to start the erase process. The erase operation is internally self-timed and should take  
place in a time of tCE. During this time, the Status Register will indicate that the device is busy.  
The Chip Erase command will not affect sectors that are protected or locked down; the contents  
of those sectors will remain unchanged. Only those sectors that are not protected or locked  
down will be erased.  
11  
3542F–DFLASH–09/06