page in main memory that is being programmed has been previously erased using one of the
erase commands (Page Erase or Block Erase). The programming of the page is internally self-
timed and should take place in a maximum time of tP. During this time, the status register and
the RDY/BUSY pin will indicate that the part is busy.
7.4
Page Erase
The Page Erase command can be used to individually erase any page in the main memory array
allowing the Buffer to Main Memory Page Program to be utilized at a later time. To perform a
page erase in the standard DataFlash page size (1056 bytes), an opcode of 81H must be loaded
into the device, followed by three address bytes comprised of 13 page address bits (PA12 -
PA0) that specify the page in the main memory to be erased and 11 don’t care bits. To perform
a page erase in the binary page size (1024 bytes), the opcode 81H must be loaded into the
device, followed by three address bytes consist of 13 page address bits (A22 - A10) that specify
the page in the main memory to be erased and 10 don’t care bits. When a low-to-high transition
occurs on the CS pin, the part will erase the selected page (the erased state is a logical 1). The
erase operation is internally self-timed and should take place in a maximum time of tPE. During
this time, the status register and the RDY/BUSY pin will indicate that the part is busy.
7.5
Block Erase
A block of eight pages can be erased at one time. This command is useful when large amounts
of data has to be written into the device. This will avoid using multiple Page Erase Commands.
To perform a block erase for the standard DataFlash page size (1056 bytes), an opcode of 50H
must be loaded into the device, followed by three address bytes comprised of 10 page address
bits (PA12 -PA3) and 14 don’t care bits. The 10 page address bits are used to specify which
block of eight pages is to be erased. To perform a block erase for the binary page size (1024
bytes), the opcode 50H must be loaded into the device, followed by three address bytes consist-
ing of 10 page address bits (A22 - A13) and 13 don’t care bits. The 10 page address bits are
used to specify which block of eight pages is to be erased. When a low-to-high transition occurs
on the CS pin, the part will erase the selected block of eight pages. The erase operation is inter-
nally self-timed and should take place in a maximum time of tBE. During this time, the status
register and the RDY/BUSY pin will indicate that the part is busy.
Table 7-1.
Block Erase Addressing
PA12/
A22
PA11/
A21
PA10/
A20
PA9/
A19
PA8/
A18
PA7/
A17
PA6/
A16
PA5/
A15
PA4/
A14
PA3/
A13
PA2/
A12
PA1/
A11
PA0/
A10
Block
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
0
1
0
1
X
X
X
X
X
X
X
X
X
X
X
X
0
1
2
3
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
1
1
0
1
0
1
X
X
X
X
X
X
X
X
X
X
X
X
1020
1021
1022
1023
10
AT45DB642D
3542F–DFLASH–09/06
ATMEL [ ATMEL ]
