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AT45DB321D-SU-SL735 参数 Datasheet PDF下载

AT45DB321D-SU-SL735图片预览
型号: AT45DB321D-SU-SL735
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 32MX1, PDSO8, 0.209 INCH, GREEN, PLASTIC, EIAJ, SOIC-8]
分类和应用: 时钟光电二极管内存集成电路
文件页数/大小: 54 页 / 1682 K
品牌: ATMEL [ ATMEL ]
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AT45DB321D  
5. Device Operation  
The device operation is controlled by instructions from the host processor. The list of instructions  
and their associated opcodes are contained in Table 15-1 on page 28 through Table 15-7 on  
page 31. A valid instruction starts with the falling edge of CS followed by the appropriate 8-bit  
opcode and the desired buffer or main memory address location. While the CS pin is low, tog-  
gling the SCK pin controls the loading of the opcode and the desired buffer or main memory  
address location through the SI (serial input) pin. All instructions, addresses, and data are trans-  
ferred with the most significant bit (MSB) first.  
Buffer addressing for the DataFlash standard page size (528 bytes) is referenced in the  
datasheet using the terminology BFA9 - BFA0 to denote the 10 address bits required to desig-  
nate a byte address within a buffer. Main memory addressing is referenced using the  
terminology PA12 - PA0 and BA9 - BA0, where PA12 - PA0 denotes the 13 address bits  
required to designate a page address and BA9 - BA0 denotes the 10 address bits required to  
designate a byte address within the page.  
For “Power of 2” binary page size (512 bytes) the Buffer addressing is referenced in the  
datasheet using the conventional terminology BFA8 - BFA0 to denote the 9 address bits  
required to designate a byte address within a buffer. Main memory addressing is referenced  
using the terminology A21 - A0, where A21 - A9 denotes the 13 address bits required to desig-  
nate a page address and A8 - A0 denotes the 9 address bits required to designate a byte  
address within a page.  
6. Read Commands  
By specifying the appropriate opcode, data can be read from the main memory or from either  
one of the two SRAM data buffers. The DataFlash supports RapidS protocols for Mode 0 and  
Mode 3. Please refer to the “Detailed Bit-level Read Timing” diagrams in this datasheet for  
details on the clock cycle sequences for each mode.  
6.1  
Continuous Array Read (Legacy Command: E8H): Up to 66 MHz  
By supplying an initial starting address for the main memory array, the Continuous Array Read  
command can be utilized to sequentially read a continuous stream of data from the device by  
simply providing a clock signal; no additional addressing information or control signals need to  
be provided. The DataFlash incorporates an internal address counter that will automatically  
increment on every clock cycle, allowing one continuous read operation without the need of  
additional address sequences. To perform a continuous read from the DataFlash standard page  
size (528 bytes), an opcode of E8H must be clocked into the device followed by three address  
bytes (which comprise the 24-bit page and byte address sequence) and 4 don’t care bytes. The  
first 13 bits (PA12 - PA0) of the 23-bit address sequence specify which page of the main mem-  
ory array to read, and the last 10 bits (BA9 - BA0) of the 23-bit address sequence specify the  
starting byte address within the page. To perform a continuous read from the binary page size  
(512 bytes), the opcode (E8H) must be clocked into the device followed by three address bytes  
and 4 don’t care bytes. The first 13 bits (A21 - A9) of the 22-bits sequence specify which page of  
the main memory array to read, and the last 9 bits (A8 - A0) of the 22-bits address sequence  
specify the starting byte address within the page. The don’t care bytes that follow the address  
bytes are needed to initialize the read operation. Following the don’t care bytes, additional clock  
pulses on the SCK pin will result in data being output on the SO (serial output) pin.  
The CS pin must remain low during the loading of the opcode, the address bytes, the don’t care  
bytes, and the reading of data. When the end of a page in main memory is reached during a  
5
3597J–DFLASH–4/08  
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