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5962-8959818MZC 参数 Datasheet PDF下载

5962-8959818MZC图片预览
型号: 5962-8959818MZC
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 128KX8, 45ns, CMOS, CDIP32, 0.400 INCH, CERAMIC, SIDE BRAZED, DIP-32]
分类和应用: 内存集成电路静态存储器
文件页数/大小: 15 页 / 337 K
品牌: ATMEL [ ATMEL CORPORATION ]
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M65608E
AC Parameters
AC Test Conditions
Input Pulse Levels: ....................................GND to 3.0V
Input Rise/Fall Times: ...............................5 ns
Input Timing Reference Levels: ................1.5V
Output loading IOL/IOH (see Figure 1 and Figure 2)+30 pF
AC Test Loads Waveforms
Figure 1
Figure 2
Figure 3
Data Retention Mode
Atmel CMOS RAM’s are designed with battery backup in mind. Data retention voltage
and supply current are guaranteed over temperature. The following rules ensure data
retention:
1. During data retention chip select CS1 must be held high within VCC to VCC -
0.2V or, chip select CS2 must be held down within GND to GND +0.2V.
2. Output Enable (OE) should be held high to keep the RAM outputs high imped-
ance, minimizing power dissipation.
3. During power up and power-down transitions CS1 and OE must be kept between
VCC + 0.3V and 70% of VCC, or with CS2 between GND and GND -0.3V.
4. The RAM can begin operation > TR ns after VCC reaches the minimum opera-
tion voltages (4.5V).
Timing
6
4151I–AERO–03/04