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5962-895618MTX 参数 Datasheet PDF下载

5962-895618MTX图片预览
型号: 5962-895618MTX
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 128KX8, 45ns, CMOS, 0.400 INCH, FP-32]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 12 页 / 246 K
品牌: ATMEL [ ATMEL CORPORATION ]
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Features
Operating voltage: 5V
Access time: 30, 45ns
Very low power consumption
– active: 250mW (Typ)
– standby: 1 µW (Typ)
– data retention: 0.5 µW (Typ)
Wide temperature Range: -55°C to +125°C
400Mils width package
TTL compatible inputs and outputs
Asynchronous
Single 5 volt supply
Equal Cycle and access time
Gated inputs:
– no pull-up/down
– resistors are required
QML Q and V with SMD 5962-89598
Rad Tolerant
5V 128 K x 8
Very Low Power
CMOS SRAM
M65608E
Description
The M65608E is a very low power CMOS static RAM organized as 131072 x 8bits.
Atmel Wireless & Microcontrollers brings the solution to applications where fast com-
puting is as mandatory as low consumption, such as aerospace electronics, portable
instruments, or embarked systems.
Utilizing an array of six transistors (6T) memory cells, the M65608E combines an
extremely low standby supply current (Typical value= 20µA) with a fast access time at
30ns over the full military temperature range. The high stability of the 6T cell provides
excellent protection against soft errors due to noise.
The M65608E is processed according to the methods of the latest revision of the MIL
STD 883 (class B or S), ESA SCC 9000 or QML.
Rev. F–20-Aug-01
1