AT28C010 Military
DC Characteristics (Continued)
Symbol
Parameter
Condition
Min
Max
Units
VIH
Input High Voltage
Output Low Voltage
Output High Voltage
Output High Voltage CMOS
2.0
V
V
V
V
VOL
IOL = 2.1 mA
0.45
VOH1
VOH2
IOH = -400 μA
2.4
4,2
IOH = -100 μA; VCC = 4.5V
AC Read Characteristics
AT28C010-12
AT28C010-15
AT28C010-20
AT28C010-25
Symbol
Parameter
Min
Max
120
120
50
Min
Max
150
150
55
Min
Max
200
200
55
Min
Max
250
250
55
Units
tACC
Address to Output Delay
CE to Output Delay
OE to Output Delay
CE or OE to Output Float
ns
ns
ns
ns
ns
(1)
tCE
(2)
tOE
0
0
0
0
0
0
0
0
0
0
0
0
(3, 4)
tDF
50
55
55
55
tOH
Output Hold from OE, CE or
Address, whichever occurred
first
(5)
tCEPH
CE Pulse High Time
50
50
50
50
ns
AC Read Waveforms(1)(2)(3)(4)
Notes: 1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC
2. OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE or by tACC
- tOE after an address change without impact in tACC
.
.
3. tDF is specified from OE or CE wichever occurs first (CL = 5 pF).
4. This parameter is characterized and is not 100% tested.
5. If CE is de-asserted, it must remain de-asserted for at least 50ns during read operations other-
wise incorrect data may be read.
5
0010D–PEEPR–7/09